STTH15R06D STMicroelectronics, STTH15R06D Datasheet - Page 4

• Manufacturer Part Number: STTH15R06D
• Description: DIODE ULT FAST 600V TO-220AC
• Manufacturer: STMicroelectronics

Specifications of STTH15R06D

• Voltage - Forward (vf) (max) @ If: 2.9V @ 15A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 15A
• Current - Reverse Leakage @ Vr: 60µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 2.9 V
• Recovery Time: 50 ns
• Forward Continuous Current: 15 A
• Max Surge Current: 120 A
• Reverse Current Ir: 60 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: In Transition
• Other names: 497-5408-5; STTH15R06D

STTH15R06D/FP
Fig. 6: Reverse recovery charges versus dI
(90% confidence).
Fig.
parameters versus junction temperature.
Fig. 10: Forward recovery time versus dI
(90% confidence).
260
240
220
200
180
160
140
120
100
4/6
800
700
600
500
400
300
200
100
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
80
60
40
20
0
0
25
0
0
Qrr(nC)
tfr(ns)
VR=400V
Tj=125°C
8:
200
100
Relative
IRM
Qrr
50
400
200
dIF/dt(A/µs)
dIF/dt(A/µs)
S factor
variation
Tj(°C)
75
600
300
of
100
IF=2 x IF(av)
IF=IF(av)
Reference: Tj=125°C
800
400
VFR=1.1 x VF max.
IF=0.5 x IF(av)
Tj=125°C
dynamic
IF=IF(av)
VR=400V
Tj=125°C
IF=IF(av)
F
F
1000
/dt
/dt
500
125
Fig. 7:
values).
0.35
0.30
0.25
0.20
0.15
0.10
Fig. 9: Transient peak forward voltage versus
dI
12
11
10
Fig. 11:
voltage applied (typical values).
1000
9
8
7
6
5
4
3
2
1
0
100
10
F
0
VFP(V)
/dt (90% confidence).
0
S factor
1
C(pF)
IF=IF(av)
Tj=125°C
VR=400V
IF=IF(av)
Tj=125°C
Softness factor versus dI
100
Junction capacitance versus reverse
200
10
200
400
dIF/dt(A/µs)
dIF/dt(A/µs)
VR(V)
300
600
100
F
800
/dt (typical
400
Vosc=30mV
F=1MHz
Tj=25°C
1000
1000
500