STTH1512G STMicroelectronics, STTH1512G Datasheet - Page 4

• Manufacturer Part Number: STTH1512G
• Description: DIODE ULTRA FAST 1200V 15A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STTH1512G

• Voltage - Forward (vf) (max) @ If: 2.1V @ 15A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 15A
• Current - Reverse Leakage @ Vr: 15µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 105ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 2.1 V
• Recovery Time: 53 ns
• Forward Continuous Current: 15 A
• Max Surge Current: 150 A
• Reverse Current Ir: 15 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6095-5

Characteristics
4/11
Figure 5.
Figure 7.
Figure 9.
3.0
2.5
2.0
1.5
1.0
0.5
600
550
500
450
400
350
300
250
200
150
100
40
35
30
25
20
15
10
5
0
0
0
V
S factor
0
t (ns)
FP
rr
I =I
T =125°C
F
j
F(AV)
(V)
50
50
100
100
Reverse recovery time versus
dI
Softness factor versus
dI
Transient peak forward voltage
versus dI
100
I =2 x I
F
F
F
/dt (typical values)
/dt (typical values)
F(AV)
150
150
I =I
F
F(AV)
200
200
200
dI /dt(A/µs)
dI /dt(A/µs)
dI /dt(A/µs)
F
I =0.5 x I
F
F
/dt (typical values)
F
F
250
250
F(AV)
300
300
300
350
350
400
400
400
I
V =600V
T =125°C
V =600V
T =125°C
F
j
450
R
450
Doc ID 12157 Rev 2
R
j
≤
2xI
F(AV)
500
500
500
Figure 6.
Figure 8.
Figure 10. Forward recovery time versus dI
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
800
700
600
500
400
300
200
100
0
0
25
Q (µC)
0
t (ns)
V =600V
T =125°C
fr
rr
R
j
50
Reverse recovery charges versus
dI
Relative variations of dynamic
parameters versus junction
temperature
(typical values)
100
100
Q
I
RM
F
RR
/dt (typical values)
50
S factor
150
t
rr
200
200
dI /dt(A/µs)
I =0.5 x I
dI /dt(A/µs)
I =2 x I
F
F
I =I
F
F
F
T (°C)
F(AV)
250
F(AV)
j
75
F(AV)
300
300
350
100
Reference: T =125°C
400
400
V =1.5 x V max.
FR
STTH1512
V =600V
I =I
T =125°C
F
R
I =I
F
j
F(AV)
450
F(AV)
j
F
500
F
500
125
/dt