MMSD4148T1G ON Semiconductor, MMSD4148T1G Datasheet - Page 8

DIODE SWITCH 100V SOD123

MMSD4148T1G

Manufacturer Part Number
MMSD4148T1G
Description
DIODE SWITCH 100V SOD123
Manufacturer
ON Semiconductor
Datasheets

Specifications of MMSD4148T1G

Voltage - Forward (vf) (max) @ If
1V @ 10mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
5µA @ 75V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOD-123
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Capacitance, Junction
4 pF
Current, Forward
200 mA
Current, Surge
2 A
Package Type
SOD-123
Power Dissipation
425 mW
Primary Type
Schottky Barrier
Speed, Switching
Fast
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Time, Recovery
4 ns
Voltage, Forward
1000 mV
Voltage, Reverse
100 V
Rectifier Type
Small Signal Switching Diode
Peak Rep Rev Volt
100V
Avg. Forward Curr (max)
0.2A
Rev Curr
5uA
Peak Non-repetitive Surge Current (max)
2A
Forward Voltage
1V
Operating Temp Range
-55C to 150C
Rev Recov Time
4ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMSD4148T1GOS
MMSD4148T1GOS
MMSD4148T1GOSTR

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Final Product/Process Change Notification #16266
SC88 and SC88A
MSQA6V1W5T2G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
RSH
ELECTRICAL CHARACTERIZATION PLAN:
Datasheet specifications and product electrical performance will remain unchanged
Characterization of each qual vehicle device will be performed to the following requirements:
ELECTRICAL CHARACTERIZATION RESULTS:
Available upon request
CHANGED PART IDENTIFICATION:
Products assembled with the Copper Wire from the ON Semiconductor facility will have a Finish
Good Date Code representing Work Week 35, 2009 (date code 9) or newer.
Issue Date: 08 Jun 2009
1) Three temperature characterization on 30 units from 3 lots
2) ESD performance ( HBM, MM) on 15 units from 1 lot
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Rev.14 Jun 2007
Interval:
1000 cyc
1008 hrs
96 hrs
Results
0/480
0/240
0/240
0/240
0/6
0/90
Page 8 of 36

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