10BQ015TR Vishay, 10BQ015TR Datasheet - Page 2

DIODE SCHOTTKY 15V 1A SMB

10BQ015TR

Manufacturer Part Number
10BQ015TR
Description
DIODE SCHOTTKY 15V 1A SMB
Manufacturer
Vishay
Datasheets

Specifications of 10BQ015TR

Voltage - Forward (vf) (max) @ If
350mV @ 1A
Voltage - Dc Reverse (vr) (max)
15V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 15V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Schottky Rectifiers
Peak Reverse Voltage
15 V
Forward Continuous Current
1 A
Max Surge Current
140 A
Configuration
Single
Forward Voltage Drop
0.44 V at 2 A
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
Other names
VS-10BQ015TR
VS-10BQ015TR
VS10BQ015TR
VS10BQ015TR

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10BQ015
Bulletin PD-2.396 rev. I 07/04
Electrical Specifications
Thermal-Mechanical Specifications
2
Voltage Ratings
Absolute Maximum Ratings
T
T
R
R
wt
(**) Mounted 1 inch square PCB
V
V
I
I
E
I
V
I
V
r
C
L
dv/dt Max. Voltage Rate of Change
(*) dPtot
(1) Pulse Width < 300µs, Duty Cycle < 2%
F(AV)
FSM
AR
RM
t
J
stg
R
RWM
AS
FM
F(TO)
thJL
thJA
S
T
dTj
Max. Junction Temperature Range (*)
Max. Storage Temperature Range
Max. Thermal Resistance
Junction to Lead
Max. Thermal Resistance
Junction to Ambient
Approximate Weight
Case Style
Device Marking
Parameters
Parameters
Parameters
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Max. Average Forward Current
* See Fig. 5
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Max. Forward Voltage Drop
* See Fig. 1
Max. Reverse Leakage Current
* See Fig. 2
Threshold Voltage
Forward Slope Resistance
Typical Junction Capacitance
Typical Series Inductance
<
Rth( j-a)
1
thermal runaway condition for a diode on its own heatsink
(1)
(1)
(**)
0.10 (0.003) g (oz.)
- 55 to 125
- 55 to 150
10BQ Units
10BQ
10BQ
10000
0.35
0.44
0.32
0.40
140
390
1.0
1.0
1.0
0.5
2.0
40
12
80
36
-
-
IR1C
SMB
Units
Units
°C/W DC operation
°C/W DC operation (See Fig. 4)
V/µs
mΩ
mA
mA
mJ
nH
pF
°C
°C
A
A
A
V
V
V
V
V
Similar to DO-214AA
50% duty cycle @ T
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
Current decayng linearly to zero in 1 µsec
Frequency limited by T
@ 1.0A
@ 2.0A
@ 1.0A
@ 2.0A
T
T
T
V
Measured lead to lead 5mm from package body
(Rated V
J
J
J
J
R
= 25 °C, I
= 25 °C
= 100 °C
= T
= 5V
J
max.
DC
R
)
, (test signal range 100KHz to 1MHz) 25°C
AS
Conditions
= 1A, L = 2mH
Conditions
Conditions
T
T
V
J
J
R
L
= 25 °C
= 125 °C
= 84 °C, rectangular wave form.
= rated V
10BQ015
J
max. V
15
25
A
R
= 1.5 x V
Following any rated
load condition and
with rated V
R
www.irf.com
typical
RRM
applied

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