MBRD835L-T-F Diodes Inc, MBRD835L-T-F Datasheet

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MBRD835L-T-F

Manufacturer Part Number
MBRD835L-T-F
Description
DIODE SCHOTTKY 35V 8A DPAK
Manufacturer
Diodes Inc
Datasheet

Specifications of MBRD835L-T-F

Voltage - Forward (vf) (max) @ If
510mV @ 8A
Voltage - Dc Reverse (vr) (max)
35V
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
1.4mA @ 35V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Other names
MBRD835L-T-FDITR
Features
·
·
·
·
·
·
Mechanical Data
·
·
·
·
·
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Notes:
DS30284 Rev. B-2
Electrical Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Typical Thermal Resistance Junction to Case (Note 2)
Typical Thermal Resistance Junction to Ambient (Note 2)
Operating Temperature Range
Storage Temperature Range
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Peak Reverse Current (Note 1)
Junction Capacitance
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
Very Low Forward Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
Case: DPAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Type Number
Weight: 0.4 grams (approx.)
2. Mounted on PC board with 14mm
1. Short duration test pulse used to minimize self-heating effect.
Characteristic
Characteristic
@ T
A
= 25°C unless otherwise specified
@ T
@ T
2
A
(.013mm thick) copper pad areas.
= 25°C unless otherwise specified
C
= 88°C
www.diodes.com
Note:
Symbol
V
V
1 of 2
(BR)R
I
RM
C
FM
8A LOW VF SCHOTTKY BARRIER RECTIFIER
j
1
PIN 1
PIN 3
D
A
P
4
Symbol
V
2
Pins 1 & 3 must be electrically
connected at the printed circuit board.
V
V
I
T
R(RMS)
R
R
I
F(AV)
FSM
RWM
V
RRM
STG
T
qJC
qJA
R
j
3
Min
35
¾
¾
¾
¾
¾
C
B
E
0.48
Typ
600
0.1
¾
¾
¾
M
PIN 4, BOTTOMSIDE
HEAT SINK
L
Max
0.51
0.41
1.4
35
¾
¾
J
K
G
H
-65 to +125
-65 to +150
SPICE MODEL: MBRD835L
Value
Unit
MBRD835L
mA
pF
6.0
V
V
35
25
75
80
8
I
I
I
T
T
f = 1.0MHz, V
R
F
F
S
S
= 8A, T
= 8A, T
= 1mA
= 25°C, V
= 100°C, V
All Dimensions in mm
Dim
A
B
C
D
G
H
K
M
E
L
P
J
Test Condition
ã
S
S
= 25°C
= 125°C
Diodes Incorporated
DPAK
Min
R
6.3
0.3
2.3 Nominal
2.1
0.4
1.2
5.3
0.5 Nominal
1.3
1.0
5.1
¾
R
R
= 4.0V DC
MBRD835L
= 35V
= 35V
°C/W
°C/W
Unit
°C
°C
V
V
A
A
Max
6.7
0.8
2.5
0.6
1.6
5.7
1.8
5.5
10
¾

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MBRD835L-T-F Summary of contents

Page 1

... Typ Symbol ¾ (BR)R ¾ 0. ¾ ¾ ¾ 0 ¾ ¾ ¾ C 600 j 2 (.013mm thick) copper pad areas www.diodes.com MBRD835L SPICE MODEL: MBRD835L DPAK Min Max Dim G A 6.3 6.7 H ¾ 0.3 0.8 J 2.3 Nominal D E 2.1 2.5 G 0.4 0.6 H 1.2 1 ...

Page 2

... Fig. 4 Typical Junction Capacitance vs. Reverse Voltage 100 110 120 130 www.diodes.com T = +125° +100° +25°C A 100 200 300 400 500 Fig. 2 Typical Forward Characteristics f = 1MHz REVERSE VOLTAGE ( 125° 7.5 9 10.5 12 13.5 15 1 AVERAGE FORWARD CURRENT (A) F(AV) Fig. 6 Forward Power Dissipation MBRD835L 600 ...

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