ISL9R460S3ST Fairchild Semiconductor, ISL9R460S3ST Datasheet

DIODE STEALTH 600V 4A TO-263AB

ISL9R460S3ST

Manufacturer Part Number
ISL9R460S3ST
Description
DIODE STEALTH 600V 4A TO-263AB
Manufacturer
Fairchild Semiconductor
Series
Stealth™r
Datasheet

Specifications of ISL9R460S3ST

Voltage - Forward (vf) (max) @ If
2.4V @ 4A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
4A
Current - Reverse Leakage @ Vr
100µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
22ns
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
2.4 V
Recovery Time
22 ns
Forward Continuous Current
4 A
Max Surge Current
50 A
Reverse Current Ir
100 uA
Power Dissipation
58 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ISL9R460S3ST
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2003 Fairchild Semiconductor Corporation
ISL9R460P2, ISL9R460S2, ISL9R460S3S
4A, 600V Stealth™ Diode
General Description
The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are
Stealth™ diodes optimized for low loss performance in
high frequency hard switched applications. The
Stealth™ family exhibits low reverse recovery current
(I
operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49408.
Device Maximum Ratings
Package
CATHODE
(FLANGE)
RRM
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
T
Symbol
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
V
J
V
I
T
E
) and exceptionally soft recovery under typical
I
I
F(AV)
, T
FRM
RWM
FSM
RRM
V
P
T
PKG
AVL
R
D
L
STG
JEDEC TO-220AC
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (0.5A, 80mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
ANODE
CATHODE
(FLANGE)
CATHODE
RRM
and short t
T
JEDEC STYLE TO-262
C
= 25°C unless otherwise noted
Parameter
a
phase
C
= 155°C)
ANODE
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
CATHODE
ANODE
N/C
JEDEC TO-263AB
ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B2
CATHODE
(FLANGE)
-55 to 175
Ratings
600
600
600
300
260
50
58
10
4
8
Symbol
July 2003
rr
b
Units
< 20ns
/ t
mJ
K
A
°C
°C
°C
W
V
V
V
A
A
A
a
> 3
o
C

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ISL9R460S3ST Summary of contents

Page 1

... CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2003 Fairchild Semiconductor Corporation Features • ...

Page 2

... Package Marking and Ordering Information Device Marking Device R460P2 ISL9R460P2 R460S2 ISL9R460S2 R460S3S ISL9R460S3S R460S3S ISL9R460S3ST Electrical Characteristics Symbol Parameter Off State Characteristics I Instantaneous Reverse Current R On State Characteristics V Instantaneous Forward Voltage F Dynamic Characteristics C Junction Capacitance J Switching Characteristics t Reverse Recovery Time ...

Page 3

... I , FORWARD CURRENT (A) F Figure 3. t and t Curves vs Forward Current 390V 125 FORWARD CURRENT (A) F Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2003 Fairchild Semiconductor Corporation 600 100 100 C 1 0.1 2 2.5 3 100 Figure 2. Reverse Current vs Reverse Voltage 120 V 100 100 Figure 4. t ...

Page 4

... REVERSE VOLTAGE (V) R Figure 9. Junction Capacitance vs Reverse Voltage DUTY CYCLE - DESCENDING ORDER 0.5 1.0 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0. Figure 11. Normalized Maximum Transient Thermal Impedance ©2003 Fairchild Semiconductor Corporation (Continued) 180 390V 125 160 140 = 8A 120 100 80 60 700 800 ...

Page 5

... MOSFET Figure 12. It Test Circuit 0. 80mH R < 0 200V 1/2LI [V /( AVL R(AVL) R(AVL IGBT (BV > DUT CES R(AVL) CURRENT SENSE Q 1 DUT Figure 14. Avalanche Energy Test Circuit ©2003 Fairchild Semiconductor Corporation CURRENT 0 SENSE + Figure 13 Figure 15. Avalanche Current and Voltage 0. Waveforms and Definitions ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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