FFAF10U170STU Fairchild Semiconductor, FFAF10U170STU Datasheet
FFAF10U170STU
Manufacturer Part Number
FFAF10U170STU
Description
DIODE ULTRA FAST 1700V 10A TO3PF
Manufacturer
Fairchild Semiconductor
Datasheet
1.FFAF10U170STU.pdf
(4 pages)
Specifications of FFAF10U170STU
Voltage - Forward (vf) (max) @ If
2.2V @ 10A
Voltage - Dc Reverse (vr) (max)
1700V (1.7kV)
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
100µA @ 1700V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
140ns
Mounting Type
Through Hole, Radial
Package / Case
TO-3PF-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
©2001 Fairchild Semiconductor Corporation
DAMPER DIODE
Absolute Maximum Ratings
Thermal Characteristics
Electrical Characteristics
* Pulse Test: Pulse Width=300 s, Duty Cycle 2%
Features
• High voltage and high reliability
• High speed switching
• Low forward voltage
Applications
• Suitable for damper diode in horizontal
V
I
I
T
R
V
I
t
t
V
F(AV)
FSM
RM
rr
fr
deflection circuits
J,
RRM
FM
FRM
JC
Symbol
Symbol
Symbol
T
STG
*
*
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
Operating Junction and Storage Temperature
Maximum Thermal Resistance, Junction to Case
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Current
Maximum Reverse Recovery Time
(I
Maximum Forward Recovery Time
(I
Maximum Forward Recovery Voltage
F
F
=1A, di/dt = 50A/ s)
=6.5A, di/dt = 50A/ s)
60Hz Single Half-Sine Wave
@ rated V
I
I
F
F
Parameter
T
= 10A
= 10A
C
Parameter
Parameter
=25 C unless otherwise noted
T
R
FFAF10U170S
C
=25 C unless otherwise noted
1
2
T
T
T
T
@ T
C
C
C
C
= 25 C
= 125 C
= 25 C
= 125 C
C
= 125 C
TO-3PF
Min.
-
-
-
-
-
-
-
- 65 to +150
1. Cathode
Typ.
-
-
-
-
-
-
-
Value
Value
1700
100
1.5
10
Max.
140
400
2.2
2.0
0.1
10
13
2. Anode
Units
Units
Units
C/W
mA
Rev. A, June 2001
ns
ns
A
A
V
V
V
C
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FFAF10U170STU Summary of contents
Page 1
... Maximum Reverse Recovery Time rr (I =1A, di/dt = 50A Maximum Forward Recovery Time fr (I =6.5A, di/dt = 50A Maximum Forward Recovery Voltage FRM * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2001 Fairchild Semiconductor Corporation FFAF10U170S TO-3PF =25 C unless otherwise noted C Parameter @ T = 125 C C 60Hz Single Half-Sine Wave Parameter T ...
Page 2
... Reverse Voltage , V Figure 3. Typical Junction Capacitance 1500 1200 di/dt = 100A/ s 900 600 di/dt = 50A/ s 300 Forward Current , I Figure 5. Typical Stored Charge vs. Forward Current ©2001 Fairchild Semiconductor Corporation 10000 1000 100 10 1 0.1 0.001 [V] F 300 Typical Capacitance 174 pF 200 100 0 1 ...
Page 3
... Package Dimensions ©2001 Fairchild Semiconductor Corporation TO-3PF-2L Dimensions in Millimeters Rev. A, June 2001 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...