VF20120SG-E3/45 Vishay, VF20120SG-E3/45 Datasheet - Page 3

DIODE SCHOTTKY 20A 120V ITO220AB

VF20120SG-E3/45

Manufacturer Part Number
VF20120SG-E3/45
Description
DIODE SCHOTTKY 20A 120V ITO220AB
Manufacturer
Vishay
Datasheet

Specifications of VF20120SG-E3/45

Package / Case
TO-220-3 (Straight Leads, Isolated), ITO-220AB
Voltage - Forward (vf) (max) @ If
1.33V @ 20A
Voltage - Dc Reverse (vr) (max)
120V
Current - Average Rectified (io)
20A
Current - Reverse Leakage @ Vr
250µA @ 120V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Product
Schottky Rectifiers
Peak Reverse Voltage
120 V
Forward Continuous Current
20 A
Max Surge Current
150 A
Configuration
Single Dual Anode
Forward Voltage Drop
1.33 V
Maximum Reverse Leakage Current
250 uA
Operating Temperature Range
- 40 C to + 150 C
Mounting Style
Through Hole
Forward Voltage Vf Max
880mV
Junction Temperature, Tj Max
150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
VF20120SG-E3/45
VF20120SG-E3/45GI
Document Number: 88994
Revision: 24-Jun-09
10 000
0.001
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
100
100
100
0.1
0.1
10
10
10
1
1
0.1
10
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
20
0.2
T
A
Instantaneous Forward Voltage (V)
= 125 °C
30
0.4
T
A
T
= 150 °C
A
Reverse Voltage (V)
40
1
T
= 150 °C
0.6
A
T
= 25 °C
A
= 25 °C
50
T
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
0.8
A
For technical questions within your region, please contact one of the following:
T
T
= 100 °C
A
A
= 100 °C
60
= 125 °C
V20120SG, VF20120SG, VB20120SG & VI20120SG
1.0
70
10
T
f = 1.0 MHz
V
J
sig
1.2
= 25 °C
80
= 50 mVp-p
1.4
90
100
100
1.6
New Product
0.1
10
10
1
1
0.01
0.01
Figure 6. Typical Transient Thermal Impedance
Figure 7. Typical Transient Thermal Impedance
PDD-Europe@vishay.com
Vishay General Semiconductor
Junction to Case
0.1
0.1
t - Pulse Duration (s)
t - Pulse Duration (s)
1
1
Junction to Case
V(B,I)20120SG
VF20120SG
10
10
www.vishay.com
100
100
3

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