BY229-600,127 NXP Semiconductors, BY229-600,127 Datasheet - Page 3

DIODE RECT 600V 8A TO-220AC

BY229-600,127

Manufacturer Part Number
BY229-600,127
Description
DIODE RECT 600V 8A TO-220AC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BY229-600,127

Voltage - Forward (vf) (max) @ If
1.85V @ 20A
Voltage - Dc Reverse (vr) (max)
500V
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
400µA @ 500V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
135ns
Mounting Type
Through Hole
Package / Case
TO-220AC-2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Other names
933463780127
BY229-600
BY229-600
Philips Semiconductors
September 1998
Rectifier diodes
fast, soft-recovery
I
square wave current waveform; parameter D = duty
I
R
F
Fig.2. Maximum forward dissipation, P
Fig.3. Maximum forward dissipation, P
sinusoidal current waveform; parameter a = form
20
15
10
15
10
5
0
5
0
0
0
PF / W
PF / W
Vo = 1.25 V
Rs = 0.03 Ohms
Rs = 0.03 Ohms
Vo = 1.25 V
Fig.1. Definition of t
2
I
rrm
2
dI
dt
factor = I
0.1
Qs
F
4
4
cycle = t
0.2
IF(AV) / A
IF(AV) / A
BY329
BY329
2.8
trr
F(RMS)
6
4
p
/T .
I
rr
2.2
/I
0.5
, Q
F(AV)
8
1.9
s
t
p
.
and I
T
6
Tmb(max) / C
Tmb(max) / C
a = 1.57
25%
10
D =
D = 1.0
rrm
F
F
= f(I
= f(I
t
T
p
t
12
8
130
140
120
F(AV)
130
140
F(AV)
110
150
120
150
time
100%
);
);
3
I
F
Fig.4. Maximum non-repetitive rms forward current.
Fig.5. Typical and maximum forward characteristic;
= f(t
Fig.6. Maximum Q
80
70
60
50
40
30
20
10
p
0
); sinusoidal current waveform; T
0.1
1ms
10
30
20
10
1
0
IFS(RMS) / A
1
0
Qs / uC
IF / A
Tj = 150 C
Tj = 25 C
to surge with reapplied V
Tj = 150 C
Tj = 25 C
I
F
IFSM
10ms
= f(V
0.5
F
); parameter T
-dIF/dt (A/us)
s
at T
tp / s
VF / V
0.1s
typ
10
1
2 A
j
= 25˚C and 150˚C
Product specification
BY229 series
1.5
1s
RWM
j
IF = 10 A
max
j
BY229F
= 150˚C prior
BY329
.
10 A
BY229
1 A
2 A
1 A
100
Rev 1.200
2
10s

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