STTA112U STMicroelectronics, STTA112U Datasheet - Page 3

• Manufacturer Part Number: STTA112U
• Description: DIODE ULTRA FAST 1200V 1A SMB
• Manufacturer: STMicroelectronics
• Series: TURBOSWITCH™r

Specifications of STTA112U

• Voltage - Forward (vf) (max) @ If: 1.65V @ 1A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 10µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 115ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Capacitance @ Vr, F: -
• Other names: 497-3237-2

Fig. 1: Conduction losses versus average current.
Fig. 3: Relative variation of thermal transient im-
pedance junction to lead versus pulse duration.
Fig. 5: Reverse recovery time versus dI
confidence).
1.50
1.25
1.00
0.75
0.50
0.25
0.00
300
250
200
150
100
50
0
0.0
0
trr(ns)
P1(W)
20
0.1
40
0.2 0.3
60
= 0.1
I
80
0.4
d
F
=2*I
IF
/dt(A/µs)
I
F(av)
F(av)
100 120 140 160 180 200
0.5
(A)
= 0.2
0.6 0.7
= 0.5
0.8
V
Tj=125°C
F
R
/dt (90%
= 1
=600V
0.9 1.0
Fig. 2: Forward voltage drop versus forward cur-
rent (Maximum values).
50.0
10.0
Fig. 4: Peak reverse recovery current versus dI
(90% confidence).
15.0
12.5
10.0
Fig. 6: Softness factor (tb/ta) versus dI
values).
1.00
0.80
0.60
0.40
1.0
0.1
7.5
5.0
2.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
0
I
S factor
IFM(A)
RM
Tj=125°C
(A)
20
20
40
40
60
60
I
F
=2*I
d
d
80
80
I
F
F(av)
IF
IF
<2*I
/dt(A/µs)
/dt(A/µs)
VFM(V)
F(av)
100 120 140 160 180 200
100 120 140 160 180 200
V
Tj=125°C
R
STTA112U
=600V
F
/dt (Typical
V
Tj=125°C
R
=600V
F
3/8
/dt