1N5818RL STMicroelectronics, 1N5818RL Datasheet - Page 3

• Manufacturer Part Number: 1N5818RL
• Description: DIODE SCHOTTKY 40V 1A DO-41
• Manufacturer: STMicroelectronics

Specifications of 1N5818RL

• Voltage - Forward (vf) (max) @ If: 500mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
Fig. 5-1:
current versus overload duration
(maximum values) (1N5817/1N5818).
Fig. 6: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
10
1.0
0.8
0.6
0.4
0.2
0.0
0.01
1E-3
9
8
7
6
5
4
3
2
1
0
1E-1
0.1
0.01
1
Zth(j-a)/Rth(j-a)
IM(A)
P
I
= 0.1
P
M
= 0.2
= 0.5
ARM
ARM p
(1µs)
(t )
=0.5
t
Single pulse
0.1
1E+0
Non repetitive surge peak forward
1E-2
1
t (µs)
1E+1
p
t(s)
tp(s)
10
1E-1
1E+2
100
=tp/T
Ta=100°C
T
Ta=25°C
Ta=75°C
tp
1E+0
1E+3
1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
Fig. 5-2:
current versus overload duration
(maximum values) (1N5819).
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values).
1E-3
500
200
100
8
7
6
5
4
3
2
1
0
50
20
10
1
0
IM(A)
0
P
1
P
ARM
C(pF)
I
M
ARM p
(25°C)
(t )
=0.5
t
25
2
Non repetitive surge peak forward
1E-2
50
T (°C)
5
1N5817
j
t(s)
1N5819
75
VR(V)
1E-1
10
100
20
125
1N581x
Ta=100°C
F=1MHz
Ta=25°C
Ta=75°C
Tj=25°C
1N5818
1E+0
150
3/5
40