STTA312B STMicroelectronics, STTA312B Datasheet - Page 3

• Manufacturer Part Number: STTA312B
• Description: DIODE TURBO 3A 1200V DPAK
• Manufacturer: STMicroelectronics
• Series: TURBOSWITCH™r

Specifications of STTA312B

• Voltage - Forward (vf) (max) @ If: 1.8V @ 3A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 20µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 115ns
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

Fig. 1: Conduction losses versus average current.
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 5: Reverse recovery time versus dI
confidence).
8
7
6
5
4
3
2
1
0
1.0
0.8
0.6
0.4
0.2
0.0
600
500
400
300
200
100
0.0
1E-3
P1(W)
Zth(j-c)/Rth(j-c)
0
trr(ns)
= 0.5
= 0.2
= 0.1
0.5
10
Single pulse
20
1.0
1E-2
30
= 0.1
IF=IF(av)
1.5
dIF/dt(A/µs)
40
IF=2*IF(av)
IF(av) (A)
tp(s)
50
= 0.2
2.0
60
1E-1
2.5
70
= 0.5
=tp/T
80
F
3.0
VR=600V
Tj=125°C
/dt (90%
T
90 100
= 1
tp
1E+0
3.5
Fig. 2: Forward voltage drop versus forward cur-
rent (maximum values).
3E+1
1E+1
1E+0
Fig. 4: Peak reverse recovery current versus dI
(90% confidence).
14
12
10
Fig. 6: Softness factor tb/ta versus dI
values).
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1E-1
1E-2
8
6
4
2
0
0
IRM(A)
0
S factor
0.0
IFM(A)
VR=600V
Tj=125°C
10
10
20
0.5
20
30
30
Tj=125°C
1.0
40
40
dIF/dt(A/µs)
dIF/dt(A/µs)
VFM(V)
50
50
1.5
60
60
Tj=25°C
IF=2*IF(av)
2.0
70
70
STTA312B
IF=IF(av)
80
80
F
IF<2*IF(av)
VR=600V
Tj=125°C
/dt (typical
2.5
90 100
90
F
100
3/8
3.0
/dt