STTA812D STMicroelectronics, STTA812D Datasheet
STTA812D
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STTA812D Summary of contents
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... They are particularly suitable in motor control circuitries the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. Parameter TO-220AC/ D TO-220AC Ins 5kHz square tp = 10ms sinusoidal STTA812D/DI TO-220AC Ins. STTA812DI PAK STTA812G Value Unit 1200 1200 2 PAK 30 ...
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... STTA812D/DI/G THERMAL AND POWER DATA Symbol R Junction to case thermal th(j-c) resistance P Conduction power dissipation =0.5 F(AV) P Total power dissipation max Pmax = (P3 = 10% P1) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter V Forward voltage drop Reverse leakage current R ** Vto Threshold voltage rd Dynamic parameter Test pulses : * tp = 380 s, < < ...
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... Fig. 6: Softness factor (tb/ta) versus dI F values). S factor 1.40 VR=600V Tj=125°C 1.20 IF=IF(av) 1.00 0.80 0 400 500 STTA812D/DI/G VFM(V) 1.0 2.0 3.0 4.0 Peak reverse recovery current versus IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) dIF/dt(A/µs) 100 200 300 400 /dt (typical ...
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... STTA812D/DI/G Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). 1.1 S factor 1.0 0.9 IRM 0.8 Tj(°C) 0 Fig. 9: Forward recovery time versus dI confidence). tfr(ns) 600 500 400 300 200 dIF/dt(A/µs) 100 0 100 200 300 4/10 Fig.8: Transient peak forward voltage versus dI /dt (90% confidence) ...
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... Fig. A: “FREEWHEEL” MODE. SWITCHING TRANSISTOR 1/T series has been TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 REVERSE SWITCHING LOSSES LOSSES in the diode in the diode DIODE: TURBOSWITCH T = t/T STTA812D/DI/G Watts SWITCHING LOSSES in the tansistor due to the diode IL LOAD 5/10 ...
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... STTA812D/DI/G Fig. B: SNUBBER DIODE. PWM 1/T = t/T Fig. D: RECTIFIER DIODE. STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES . Fig. E: STATIC CHARACTERISTICS 6/10 Fig. C: DEMAGNETIZING DIODE. Conduction losses : Reverse losses : F(AV (RMS ...
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... S = tb/ta Fig. G: TURN-ON CHARACTERISTICS / 1. tfr Turn-on losses : (in the transistor, due to the diode DIODE Turn-off losses (in the diode RECTIFIER Turn-off losses : OPERATION (with non negligible serial inductance P3,P3’ and P5 are suitable for power MOSFET and IGBT I Fmax Turn-on losses : 0 STTA812D/DI ...
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... STTA812D/DI/G PACKAGE DATA TO-220AC Ins Cooling method: by conduction (C) Recommended torque value: 0.8 m.N Maximum torque value: 1.0 m.N 8/ REF. Min. Typ. Max. Min. Typ. Max. A 15. 13.00 B 10.00 b1 0.61 b2 1. 0.49 c2 2.40 e 4.80 F 6.20 I 3.75 I4 15.80 16.40 16.80 0.622 0.646 0.661 ...
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... FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 3.70 8.90 REF 5.08 1.30 STTA812D/DI/G DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1 ...
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... Recommended torque value: 0.55 m.N Maximum torque value: 0.7 m.N Ordering type Marking STTA812D STTA812D STTA812DI STTA812DI STTA812G STTA812G STTA812G-TR STTA812G Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...