STTH212RL STMicroelectronics, STTH212RL Datasheet - Page 4

DIODE ULT FAST 1200V 2A DO-201AD

STTH212RL

Manufacturer Part Number
STTH212RL
Description
DIODE ULT FAST 1200V 2A DO-201AD
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH212RL

Voltage - Forward (vf) (max) @ If
1.75V @ 2A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
10µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Other names
497-8050-2
STTH212RL
1 Electrical characteristics
4/9
Figure 5.
Figure 7.
Figure 9.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
900
800
700
600
500
400
300
200
100
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.E-01
0
t rr (ns)
Z th(j-a) /R th(j-a)
0
0
S
FACTOR
S
I F =0.5 x I F(AV)
V
T
Cu
I
25
j
SMC
50
F
R
=125° C
=1cm²
=I
=600V
F( AV)
Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
S
Reverse recovery time versus dI
(typical values)
Softness factor versus dI
(typical values)
I F =2 x I F(AV)
100
50
CU
1.E+00
= 1cm
75
150
I F =I F(AV)
I F =I F(AV)
100
dl /dt(A/µs)
200
dl /dt(A/µs)
F
F
2
1.E+01
)
125
250
t p (s)
150
300
175
350
1.E+02
200
400
F
T j =125 °C
V R =600V
/dt
225
450
1.E+03
250
500
F
/dt
Figure 6.
Figure 8.
Figure 10. Relative variations of dynamic
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
11
10
1400
1200
1000
9
8
7
6
5
4
3
2
1
0
800
600
400
200
25
I
RM
0
0
0
Q rr (nC)
(A)
V
T
j
R
=125° C
=600V
20
V
T
j
R
=125°C
50
=600V
S
Reverse recovery current versus
dI
Reverse recovery charges versus
dI
parameters versus junction
temperature
FAC TO R
I
R M
Q
40
F
F
100
R R
/dt (typical values)
/dt (typical values)
50
I
I
F
F
=0. 5 x I
=0. 5 x I
60
150
F( AV
F( AV
I
F
=2 x I
)
)
80
dl /dt(A/µs)
200
I
F
F
F( AV)
=I
I
F
F( AV)
=0. 5 x I
I
I
F
F
=I
=I
100
75
F( AV)
F( AV)
I
I
250
F
F
dl /dt(A/µs)
=2 x I
=2 x I
F( AV)
T j (°C)
F
F( AV)
F( AV)
120
300
140
350
100
R ef er ence:T
160
400
V
I
F
R
=I
=600V
STTH212
F( AV)
180
450
j
=125° C
500
200
125

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