STTH212 STMicroelectronics, STTH212 Datasheet - Page 3

• Manufacturer Part Number: STTH212
• Description: DIODE ULT FAST 1200V 2A DO-201AD
• Manufacturer: STMicroelectronics

Specifications of STTH212

• Voltage - Forward (vf) (max) @ If: 1.75V @ 2A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 10µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-7591-3; STTH212

STTH212
Table 4.
Figure 1.
Figure 3.
Symbol
V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
t
t
FP
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.E-01
rr
fr
0.00
Z th(j-a) /R th(j-a)
P(W)
L
DO-201AD
leads
0.25
=10mm
Reverse recovery
time
Forward recovery
time
Forward recovery
voltage
Dynamic Electrical Characteristics
Conduction losses versus average
forward current
Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
L
0.50
Leads
1.E+00
Parameter
δ = 0.05
0.75
= 10mm)
1.00
δ = 0.1 δ = 0.2
I
F(AV)
1.E+01
1.25
t p (s)
(A)
1.50
T
T
j
j
δ = 0.5
1.75
= 25°C
= 25°C
1.E+02
δ
2.00
=tp/T
δ = 1
2.25
T
I
I
V
F
F
FR
tp
1.E+03
= 1A dI
= 2A
2.50
= 1.1 x V
Test conditions
F
dI
/dt = -100 A/µs V
Figure 2.
Figure 4.
F
Fmax
/dt = 50 A/µs
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50
45
40
35
30
25
20
15
10
5
0
1.E-01
0.0
I
Z th(j-a) /R th(j-a)
FM
S
(A)
Cu
SMB
=1cm²
0.5
Forward voltage drop versus
forward current
Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
S
CU
1.0
1.E+00
R
=30V
= 1cm
(typical values)
T =125°C
j
1.5
(maximum values)
2
2.0
T =125°C
1.E+01
j
)
Min.
t p (s)
2.5
1 Electrical characteristics
V
FM
(V)
(maximum values)
3.0
Typ
1.E+02
T =25°C
j
3.5
Max.
500
75
30
4.0
1.E+03
4.5
Unit
ns
ns
V
3/9