MUR180E ON Semiconductor, MUR180E Datasheet

DIODE ULTRA FAST 1A 800V DO-41

MUR180E

Manufacturer Part Number
MUR180E
Description
DIODE ULTRA FAST 1A 800V DO-41
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MUR180E

Voltage - Forward (vf) (max) @ If
1.75V @ 1A
Voltage - Dc Reverse (vr) (max)
800V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
10µA @ 800V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
100ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Capacitance @ Vr, F
-
Other names
MUR180EOS

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MUR180E, MUR1100E
SWITCHMODEt
Power Rectifiers
Ultrafast “E” Series with High Reverse
Energy Capability
power supplies, inverters and as free wheeling diodes.
Features
Mechanical Characteristics:
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 3
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Note 1)
(Square Wave Mounting Method #3 Per Note 3)
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage
Temperature Range
These state−of−the−art devices are designed for use in switching
Inductive Load Circuits
Leads are Readily Solderable
260°C Max. for 10 Seconds
the Part Number
10 mjoules Avalanche Energy Guaranteed
Excellent Protection Against Voltage Transients in Switching
Ultrafast 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 1000 V
These are Pb−Free Devices*
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Lead Temperature for Soldering Purposes:
Shipped in Plastic Bags; 1,000 per Bag
Available Tape and Reel; 5,000 per Reel, by Adding a “RL’’ Suffix to
Polarity: Cathode Indicated by Polarity Band
Rating
MUR1100E is a Preferred Device
MUR1100E
MUR180E
Symbol
T
V
V
I
I
J
F(AV)
RWM
FSM
RRM
V
, T
R
stg
T
A
−65 to
Value
1.0 @
1000
+175
800
= 95°C
35
1
Unit
°C
V
A
A
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1.0 AMPERES, 800−1000 VOLTS
(Note: Microdot may be in either location)
ULTRAFAST RECTIFIERS
A
MUR1x0E = Device Code
Y
WW
G
ORDERING INFORMATION
MARKING DIAGRAM
http://onsemi.com
= Assembly Location
= Year
= Work Week
= Pb−Free Package
MUR1x0E
x 8 or 10
YYWW G
Publication Order Number:
A
G
AXIAL LEAD
PLASTIC
CASE 59
MUR180E/D

Related parts for MUR180E

MUR180E Summary of contents

Page 1

... MUR180E, MUR1100E MUR1100E is a Preferred Device SWITCHMODEt Power Rectifiers Ultrafast “E” Series with High Reverse Energy Capability These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • 10 mjoules Avalanche Energy Guaranteed • ...

Page 2

... ORDERING INFORMATION Device MUR180E MUR180EG MUR180ERL MUR180ERLG MUR1100E MUR1100EG MUR1100ERL MUR1100ERLG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *These packages are inherently Pb−Free. MUR180E, MUR1100E Symbol R qJA ...

Page 3

... J 2.0 1 0.5 1.0 1 AVERAGE FORWARD CURRENT (AMPS) F(AV) Figure 4. Power Dissipation MUR180E, MUR1100E ELECTRICAL CHARACTERISTICS 1000 100 10 1.0 0.1 0.01 0 100 200 Figure 2. Typical Reverse Current* * The curves shown are typical for the highest voltage device in the grouping. Typical reverse current for lower voltage selections can be estimated from these same curves ...

Page 4

... DUT EQUATION (2 LPK AVAL 2 MUR180E, MUR1100E component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the V breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the ...

Page 5

... MUR180E, MUR1100E NOTE 3 — AMBIENT MOUNTING DATA Data shown for thermal resistance, junction−to−ambient (R ) for the mountings shown used as typical qJA guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR R IN STILL AIR ...

Page 6

... Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MUR180E, MUR1100E PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U NOTES: 1 ...

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