MURA160T3 ON Semiconductor, MURA160T3 Datasheet - Page 2

• Manufacturer Part Number: MURA160T3
• Description: DIODE ULTRA FAST 1A 600V SMA
• Manufacturer: ON Semiconductor

Specifications of MURA160T3

• Voltage - Forward (vf) (max) @ If: 1.25V @ 1A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Capacitance @ Vr, F: -
• Other names: MURA160T3OSCT

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
Maximum Instantaneous Reverse Current (Note 3)
Maximum Reverse Recovery Time
0.01
0.01
100
0.1
0.1
10
10
1
1
0
0.3
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
(i
F
F
F
= 1.0 A, di/dt = 50 A/ms)
= 1.0 A, T
= 1.0 A, T
0.5
100
Figure 3. Typical Forward Voltage
V
Figure 1. Typical Reverse Current
F
, INSTANTANEOUS VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
0.7
J
J
= 25°C)
= 150°C)
200
T
T
0.9
J
J
T
J
J
= 25°C)
= 150°C)
J
= 150°C
= 100°C
T
= 25°C
300
C
= 150°C
1.1
Characteristic
400
1.3
100°C
500
1.5
http://onsemi.com
25°C
600
1.7
2
1000
0.01
100
0.1
10
10
1
1
0
0.3
0.5
Figure 4. Maximum Forward Voltage
Figure 2. Maximum Reverse Current
100
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
V
R
0.7
T
T
T
, REVERSE VOLTAGE (VOLTS)
J
J
J
= 150°C
= 100°C
= 25°C
200
0.9
Symbol
T
C
300
1.1
v
i
t
= 150°C
R
rr
F
1.3
400
Max
1.25
1.05
150
5.0
75
1.5
100°C
500
25°C
1.7
Unit
mA
ns
V
600
1.9