MUR8100E ON Semiconductor, MUR8100E Datasheet - Page 4

• Manufacturer Part Number: MUR8100E
• Description: DIODE ULT FAST 8A 1000V TO220AC
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MUR8100E

• Voltage - Forward (vf) (max) @ If: 1.8V @ 8A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 25µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Capacitance @ Vr, F: -
• Other names: MUR8100EOS

Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
up linearly; and energy is stored in the coil. At t
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV
which now starts to decay linearly through the diode, and
goes to zero at t
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V
The unclamped inductive switching circuit shown in
When S
By solving the loop equation at the point in time when S
DUT
MERCURY
W
W
EQUATION (1):
EQUATION (2):
SWITCH
and the diode begins to conduct the full load current
AVAL
AVAL
1
is closed at t
S
[ 1
[ 1
1
2
.
2
2
Figure 6. Test Circuit
LI
LI
DD
2
LPK
2
LPK
0
power supply while the diode is in
the current in the inductor I
I
L
BV
BV
DUT
+V
40 mH COIL
DUT
DD
DUT
I
D
V
DD
1
the switch
CH1
CH2
V
L
http://onsemi.com
D
CH1
ramps
Figure 8. Current−Voltage Waveforms
500V
1
50mV
1
4
SAVEREF SOURCE
CH2
ACQUISITIONS
breakdown (from t
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S
Equation (2).
MUR8100E in this test circuit conducting a peak current of
one ampere at a breakdown voltage of 1300 V, and using
Equation (2) the energy absorbed by the MUR8100E is
approximately 20 mjoules.
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
The oscilloscope picture in Figure 8, shows the
Although it is not recommended to design for this
t
0
Figure 7. Current−Voltage Waveforms
A
20ms
I
L
REF
1
953 V
to t
217:33 HRS
DD
2
) minus any losses due to finite
voltage is low compared to the
STACK
VERT
REF
t
1
BV
I
DUT
D
CHANNEL 2:
I
0.5 AMPS/DIV.
CHANNEL 1:
V
500 VOLTS/DIV.
TIME BASE:
20 ms/DIV.
L
DUT
t
1
2
was closed,
V
DD
t