80SQ045N ON Semiconductor, 80SQ045N Datasheet

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80SQ045N

Manufacturer Part Number
80SQ045N
Description
DIODE SCHOTTKY 8A 45V DO-201AD
Manufacturer
ON Semiconductor
Datasheet

Specifications of 80SQ045N

Voltage - Forward (vf) (max) @ If
550mV @ 8A
Voltage - Dc Reverse (vr) (max)
45V
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
1mA @ 45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-

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80SQ045N
Axial Lead Rectifier
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
Mechanical Characteristics:
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 3
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current T
(Psi
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating and Storage Junction Tempera-
ture Range (Reverse Voltage Applied)
Voltage Rate of Change (Rated V
These devices employ the Schottky Barrier principle in a large area
Leads are Readily Solderable
220°C Max. for 10 Seconds, 1/16″ from Case
High Current Capability
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard−Ring for Stress Protection
Low Forward Voltage
High Surge Capacity
These are Pb−Free Devices*
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Lead and Mounting Surface Temperature for Soldering Purposes:
Polarity: Cathode indicated by Polarity Band
ESD Protection: Human Body Model > 4000 V (Class 3)
JL
= 12°C/W, P.C. Board Mounting, Note 2)
Rating
Machine Model > 400 V (Class C)
Preferred Device
R
)
L
= 75°C
Symbol
T
V
V
dv/dt
I
J
FSM
RWM
V
RRM
, T
I
O
R
stg
−65 to +125
Max
140
8.0
45
10
1
V/ns
Unit
°C
V
A
A
†For information on tape and reel specifications,
*This package is inherently Pb−Free.
Preferred devices are recommended choices for future use
and best overall value.
80SQ045N
80SQ045NG
80SQ045NRL
80SQ045NRLG
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
(Note: Microdot may be in either location)
SCHOTTKY BARRIER
ORDERING INFORMATION
YY
WW
G
MARKING DIAGRAM
8.0 AMPERES
http://onsemi.com
RECTIFIER
Axial Lead*
Axial Lead*
Axial Lead*
= Year
= Work Week
= Pb−Free Package
Axial Lead*
Package
YYWW G
80SQ
Publication Order Number:
045N
G
CASE 267−05
AXIAL LEAD
(DO−201AD)
STYLE 1
1500/Tape & Reel
1500/Tape & Reel
500 Units/Box
500 Units/Box
Shipping
80SQ045N/D

Related parts for 80SQ045N

80SQ045N Summary of contents

Page 1

... J stg 80SQ045NG dv/dt 10 V/ns 80SQ045NRL 80SQ045NRLG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. Preferred devices are recommended choices for future use and best overall value. ...

Page 2

... V , REVERSE VOLTAGE (VOLTS) R Figure 3. Typical Reverse Current 80SQ045N Symbol (See Note 2 − Mounting Data) R qJL R qJA = 25°C unless otherwise noted 125°C 0.1 0.6 0.7 0.8 0.1 10,000 1000 ...

Page 3

... I , AVERAGE FORWARD CURRENT (AMPS) O Figure 7. Forward Power Dissipation 0.5 0.2 0.1 0.1 0.05 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 Figure 8. Thermal Response, Junction−to−Ambient 80SQ045N 12°C/W qJL See Note Figure 6. Current Derating − Lead NOTE 2 — MOUNTING DATA T = 125°C J É ...

Page 4

... MAX MIN MAX 0.287 0.374 7.30 9.50 0.189 0.209 4.80 5.30 0.047 0.051 1.20 1.30 1.000 −−− 25.40 −−− 2. ANODE ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 80SQ045N/D ...

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