MURD550PFT4G ON Semiconductor, MURD550PFT4G Datasheet - Page 2

DIODE ULTRA FAST 5A 500V DPAK

MURD550PFT4G

Manufacturer Part Number
MURD550PFT4G
Description
DIODE ULTRA FAST 5A 500V DPAK
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MURD550PFT4G

Voltage - Forward (vf) (max) @ If
1.15V @ 5A
Voltage - Dc Reverse (vr) (max)
520V
Current - Average Rectified (io)
5A
Current - Reverse Leakage @ Vr
5µA @ 520V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
95ns
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MURD550PFT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MURD550PFT4G
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Rating applies when surface mounted on the minimum pad sizes recommended.
2. See Note 2, Ambient Mounting Data.
3. 1 inch square pad size on FR4 board.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
THERMAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Non−Repetitive Peak Surge Current
Operating Junction Temperature Range
Storage Temperature Range
ESD Ratings:
Thermal Resistance, Junction−to−Case (Note 1)
Thermal Resistance, Junction−to−Ambient
Maximum Instantaneous Forward Voltage Drop (Note 4)
Maximum Instantaneous Reverse Current (Note 4)
Maximum Reverse Recovery Time
Working Peak Reverse Voltage
DC Blocking Voltage
(Rated V
(Rated V
(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)
Machine Model = C
Human Body Model = 3B
(I
(I
(V
(V
(I
F
F
F
R
R
= 5.0 A, T
= 5.0 A, T
= 1.0 A, di/dt = 50 A/ms, V
= 520 V, T
= 520 V, T
R
R
) T
) T
C
C
J
J
= 65°C
= 160°C
J
J
= 25°C)
= 150°C)
= 25°C)
= 150°C)
R
= 30 V, T
Rating
Rating
Rating
J
= 25°C)
MURD550PF, MUR550PF, MURF550PF
http://onsemi.com
MUR550PF, MURF550PF
MURD550P, MUR550PF
MURD550PF (Note 3)
2
,MURF550PF
MURD550PF
MUR550APF
MUR550APF
MURF550PF
MUR550APF
Symbol
Symbol
Symbol
V
V
I
ESD
R
R
I
F(AV)
T
FSM
RWM
RRM
V
V
T
I
qJC
t
stg
qJA
R
rr
R
F
J
−65 to +175
−65 to +175
Note 2
>8000
Value
Value
Value
> 400
5.75
1.15
0.98
520
100
400
5.0
2.8
5.0
85
75
62
75
95
°C/W
°C/W
Unit
Unit
Unit
mA
°C
°C
ns
V
A
A
V
V

Related parts for MURD550PFT4G