MBR150 ON Semiconductor, MBR150 Datasheet - Page 3
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MBR150
Manufacturer Part Number
MBR150
Description
DIODE SCHOTTKY 1A 50V DO-41
Manufacturer
ON Semiconductor
Datasheet
1.MBR160RLG.pdf
(5 pages)
Specifications of MBR150
Voltage - Forward (vf) (max) @ If
750mV @ 1A
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 50V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Other names
MBR150OS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR150
Manufacturer:
MOT
Quantity:
145 000
Part Number:
MBR150
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
MBR150G
Manufacturer:
ON Semiconductor
Quantity:
1 250
Company:
Part Number:
MBR150RL
Manufacturer:
MOTOROLA
Quantity:
5 250
Company:
Part Number:
MBR150RLG
Manufacturer:
ON
Quantity:
35 000
NOTE 1. — MOUNTING DATA:
(R
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
Data shown for thermal resistance junction−to−ambient
qJA)
Mounting
90
80
70
60
50
40
30
20
10
Method
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
for the mounting shown is to be used as a typical
0
1
2
3
0.1
Figure 5. Steady−State Thermal Resistance
Typical Values for R
1/8
0.2
1/4
BOTH LEADS TO HEATSINK,
1/8
52
67
—
L, LEAD LENGTH (INCHES)
Lead Length, L (in)
0.5
EQUAL LENGTH
MAXIMUM
3/8
1/4
65
80
1.0
1/2
qJA
1/2
72
87
50
in Still Air
2.0
TYPICAL
5/8
100
THERMAL CHARACTERISTICS
3/4
85
3/4
5.0
Figure 4. Thermal Response
MBR150, MBR160
°C/W
°C/W
°C/W
R
http://onsemi.com
7/8
qJA
10
t, TIME (ms)
1.0
20
3
.
200
100
80
70
60
50
40
30
20
0
50
T
R
A(A)
qS(A)
DT
DT
temperature r(t) = normalized value of transient thermal resistance
at time, t, from Figure 4, i.e.: r(t) = r(t
transient thermal resistance at time, t
NOTE 2. — THERMAL CIRCUIT MODEL:
10
(For heat conduction through the leads)
JL
JL
t
T
Z
p
100
L(A)
qJL(t)
= P
= the increase in junction temperature above the lead
pk
R
20
Figure 6. Typical Capacitance
qL(A)
= Z
• R
t
1
200
V
qJL
P
qJL
R
pk
30
T
, REVERSE VOLTAGE (VOLTS)
C(A)
• r(t)
[D + (1 − D) • r(t
R
qJ(A)
40
T
P
500
J
pk
TIME
50
P
R
)
D
1
q J(K
1
1 k
1
+ t
DUTY CYCLE, D = t
PEAK POWER, P
of an equivalent square
power pulse.
+ t
60
+ t
p
p
) + r(t
p
T
) = normalized value of
.
C(K)
T
f = 1 MHz
70
2 k
p
J
R
) − r(t
= 25°C
qL(K)
80
1
)] where
T
L(K)
pk
, is peak
p
5 k
R
/t
90
T
1
qS(K)
A(K)
10 k
100