APT50GS60BRDQ2G Microsemi Power Products Group, APT50GS60BRDQ2G Datasheet - Page 2

• Manufacturer Part Number: APT50GS60BRDQ2G
• Description: IGBT 600V 93A 415W TO247
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT50GS60BRDQ2G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3.15V @ 15V, 50A
• Current - Collector (ic) (max): 93A
• Power - Max: 415W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT50GS60BRDQ2GMI; APT50GS60BRDQ2GMI

Dynamic Characteristics
∆V
∆V
V
Symbol
Symbol
V
BR(CES)
V
GE(th)
BR(CES)
C
C
t
t
t
t
CE(ON)
C
E
E
E
E
I
C
d(off)
I
C
Q
V
G
d(on)
E
d(on)
d(off)
E
GE(th)
I
Q
CES
GES
g
Q
o(cr)
o(er)
rrm
t
on1
on2
on1
on2
oes
t
t
t
t
res
EC
ies
rr
off
off
fs
ge
gc
r
r
f
f
rr
g
/∆T
/∆T
J
J
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Transfer Capacitance
Charge Related
Reverse Transfer Capacitance
Current Related
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Peak Reverse Recovery Current
Parameter
Collector-Emitter Breakdown Voltage
Breakdown Voltage Temperature Coeff
Collector-Emitter On Voltage
Diode Forward Voltage
Gate-Emitter Threshold Voltage
Threshold Voltage Temp Coeff
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
5
6
4
T
J
J
10
10
8
9
8
9
= 25°C unless otherwise specified
4
Inductive Switching IGBT and
Inductive Switching IGBT and
V
T
Reference to 25°C, I
R
R
V
T
CE
V
J
V
I
I
I
V
GE
V
J
C
C
G
G
V
C
GE
= 125°C, V
GE
GE
GE
= 25°C, V
CE
Test Conditions
Test Conditions
= 50A
= 50A
= 4.7Ω
= 4.7Ω
= 600V,
= 50A, V
V
di
V
= 15V
= 0V
CE
F
= 0V, I
V
GE
= 0V, V
= V
= 50V, I
V
/dt = 200A/µs
V
f = 1MHz
GE
I
I
I
R
= 0 to 400V
C
F
Diode:
Diode:
C
GE
= 0 to 15V
CE
= 50A
= 400V
= 50A
= 50A
= ±20V
7
7
, V
, V
, I
= 0V
C
CE
CC
CE
CC
C
C
= 250µA
GG
GG
= 300V
C
= 1mA
= 400V,
= 50A
= 25V
= 400V,
T
T
T
T
T
T
= 250µA
= 15V
= 15V
J
J
J
J
J
J
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
Min
600
Min
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.755
0.950
2635
0.60
3.25
2.15
TBD
TBD
Typ
Typ
240
145
115
235
100
225
250
2.8
1.8
6.7
1.2
1.7
31
85
18
16
33
37
33
33
23
25
35
4
3
-
-
-
-
±100
Max
3.15
TBD
Max
50
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
mV/°C
V/°C
Unit
Unit
mJ
mJ
µA
nA
nC
nC
pF
ns
ns
ns
V
V
S
A