STGP10NC60KD STMicroelectronics, STGP10NC60KD Datasheet - Page 3

IGBT N-CH 600V 20A TO-220

STGP10NC60KD

Manufacturer Part Number
STGP10NC60KD
Description
IGBT N-CH 600V 20A TO-220
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheets

Specifications of STGP10NC60KD

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 5A
Current - Collector (ic) (max)
20A
Power - Max
65W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
20A
Collector Emitter Voltage Vces
2.5V
Power Dissipation Pd
60W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
497-5120-5

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STGB10NC60KD - STGP10NC60KD - STGF10NC60KD
1
Electrical ratings
Table 1.
1. Calculated according to the iterative formula::
2. Pulse width limited by max junction temperature
Table 2.
Symbol
Rthj-case
Rthj-amb
Symbol
I
V
P
V
CM
T
I
I
V
T
C
C
CES
TOT
T
scw
T
I
ISO
stg
GE
F
(1)
(1)
j
l
(2)
Collector-Emitter Voltage (V
Collector Current (continuous) at T
Collector Current (continuous) at T
Collector Current (pulsed)
Gate-Emitter Voltage
Diode RMS Forward Current at Tc=25°C
Total Dissipation at T
Insulation Withstand Voltage A.C.(t=1sec;Tc=25°C)
Storage Temperature
Operating Junction Temperature
Short Circuit Withstand Time
Maximum Lead Temperature For Soldering
Purpose (for 10sec. 1.6 mm from case)
Absolute maximum ratings
Thermal resistance
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Parameter
Parameter
C
I
C
= 25°C
T
C
=
GS
---------------------------------------------------------------------------------------------------
R
THJ C
= 0)
C
C
T
= 25°C
= 100°C
V
J MAX
CESAT MAX
T
C
TO-220/D²PAK
(
T
TO-220FP
C
I
C
D²PAK/TO-220 TO-220FP
)
20
10
60
--
– 55 to 150
Value
600
±20
300
30
10
10
Electrical ratings
Value
2.08
62.5
5.0
2500
25
9
6
°C/W
°C/W
°C/W
Unit
Unit
°C
°C
µs
W
A
V
A
A
A
V
3/17

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