STGF3NC120HD STMicroelectronics, STGF3NC120HD Datasheet - Page 9

• Manufacturer Part Number: STGF3NC120HD
• Description: IGBT N-CHAN 6A 1200V TO220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF3NC120HD

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 6A
• Power - Max: 25W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.8 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 6 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 6A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Pd: 25W
• Transistor Case Style: TO-220FP
• No. Of Pins: 3
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4353-5

STGF3NC120HD, STGP3NC120HD
3
Figure 20. Test circuit for inductive load
Figure 22. Switching waveform
V
CE
V
G
I
C
switching
Test circuit
Td(on)
Ton
Tr(Ion)
Td(off)
Toff
Tcross
Tr(Voff)
Tf
90%
10%
90%
10%
Doc ID 11089 Rev 3
AM01504v1
AM01506v1
90%
10%
Figure 21. Gate charge test circuit
Figure 23. Diode recovery time waveform
I
F
I
RRM
di/dt
t
a
di/dt
t
rr
t
b
Test circuit
Q
I
V
RRM
F
rr
AM01505v1
AM01507v1
t
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