STGP7NC60H STMicroelectronics, STGP7NC60H Datasheet - Page 3

• Manufacturer Part Number: STGP7NC60H
• Description: IGBT N-CHAN 25A 600V TO220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP7NC60H

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 7A
• Current - Collector (ic) (max): 25A
• Power - Max: 80W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 25 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 80W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4113-5

ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Table 8: Switching Off
Table 9: Switching Energy
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3)Turn-off losses include also the tail of the collector current.
Symbol
Symbol
Symbol
Symbol
Eon (2)
Eon (2)
(di/dt)
(di/dt)
E
E
g
t
t
t
t
t
t
r
r
C
off
off
C
C
Q
d
d
fs
Q
d(on)
d(on)
(V
(V
E
E
I
Q
CL
(
(
oes
t
t
res
t
t
ies
ts
ts
ge
gc
off
off
r
r
f
f
(3)
(3)
(1)
g
off
off
on
on
)
)
)
)
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-Off SOA Minimum
Current
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Parameter
Parameter
Parameter
Parameter
V
V
V
V
(see Figure 21)
V
R
V
R
(see Figure 18)
V
R
(see Figure 19)
V
R
(see Figure 19)
V
R
(see Figure 19)
V
R
T
(see Figure 19)
V
R
Tj = 125 °C
(see Figure 19)
CE
CE
CE
GE
clamp
CC
CC
J
CC
CC
G
G
G
cc
cc
G
G
G
G
= 10 , V
= 10 , V
= 25 °C
= 10 , V
= 10 , V
= 10
= 10
= 10
= 390 V, I
= 390 V, I
= 15 V
= 25 V, f= 1 MHz, V
= 390 V, I
= 15 V
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 480 V Tj = 150°C
Test Conditions
Test Conditions
Test Conditions
Test Conditions
, V
, V
V
,
GE
GE
GE
GE
I
GE
C
C
C
GE
GE
C
C
C
C
C
= 15V, Tj= 125°C
= 15V, Tj= 125°C
= 15V, Tj= 25°C
= 15V, Tj= 25°C
= 7 A
= 7 A,
= 7 A,
= 7 A,
= 7 A
= 7 A
= 7 A
= 7 A
= 15 V
= 15 V
= 15 V
GE
= 0
STGP7NC60H - STGD7NC60H
Min.
Min.
Min.
Min.
50
1060
1000
Typ.
4.30
Typ.
18.5
18.5
720
Typ.
Typ.
8.5
105
210
140
215
355
116
115
81
17
35
16
27
72
60
56
95
7
7
Max.
Max.
Max.
Max
125
150
275
48
A/µs
A/µs
Unit
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
ns
ns
ns
ns
3/12
S
A