IRG4IBC20FDPBF International Rectifier, IRG4IBC20FDPBF Datasheet
IRG4IBC20FDPBF
Specifications of IRG4IBC20FDPBF
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IRG4IBC20FDPBF Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • Very Low 1.66V votage drop U • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ...
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IRG4IBC20FD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆ ∆ Temperature Coeff. of Threshold Voltage ...
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rate d volta ge 4 0.0 0.1 Fig Typical Load Current ...
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IRG4IBC20FD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE ...
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1MHz ies res 800 oes 600 C ies 400 200 C ...
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IRG4IBC20FD 3.0 Ω 50Ohm 150 C ° 480V CC 2 15V GE 2.0 1.5 1.0 0.5 0 Collector-to-emitter Current (A) C Fig. 11 ...
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° ° ...
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IRG4IBC20FD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...
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Figure 18e. Macro Waveforms for µ Figure 19. Clamped Inductive Load Test Circuit www.irf.com ...
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IRG4IBC20FD Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width £ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...