STGB30NC60WT4 STMicroelectronics, STGB30NC60WT4 Datasheet - Page 5

• Manufacturer Part Number: STGB30NC60WT4
• Description: IGBT UFAST 60A 600V D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB30NC60WT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-8779-2

STGB30NC60WT4 - STGP30NC60W - STGW30NC60W
Table 6.
Table 7.
1. Turn-off losses include also the tail of the collector current
Symbol
(di/dt)
(di/dt)
Symbol
t
t
E
E
t
t
t
t
r
r
d
d
d(on)
d(on)
(V
(V
E
E
E
E
off
off
(
(
t
t
t
t
off
off
on
on
r
r
f
f
ts
ts
off
off
(1)
(1)
on
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Switching on/off (inductive load)
Switching energy (inductive load)
Parameter
Parameter
V
R
(see Figure 18)
V
R
T
V
R
(see Figure 16)
V
R
T
V
R
(see Figure 18)
V
R
T
C
CC
CC
C
C
G
G
CC
CC
cc
cc
G
G
G
G
= 125 °C
= 125 °C
=125 °C
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
=10 Ω , V
= 10 Ω , V
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
Test conditions
Test conditions
GE
(see Figure 18)
GE
GE
(see Figure 18)
GE
GE
(see Figure 16)
GE
C
C
C
C
C
C
= 15 V,
= 15 V,
= 15 V,
= 15 V,
=15 V,
= 20 A,
= 20 A,
= 20 A
= 20 A
= 15 V
= 20 A
= 20 A
Electrical characteristics
Min.
Min.
1640
1600
Typ.
29.5
13.5
19.5
Typ.
118
151
305
181
486
455
355
801
12
29
27
46
38
Max.
Max.
A/µs
A/µs
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
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