STGW20NC60VD STMicroelectronics, STGW20NC60VD Datasheet - Page 7

• Manufacturer Part Number: STGW20NC60VD
• Description: IGBT N-CHAN 60A 600V TO247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW20NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-4357-5

Figure 15: Thermal Impedance
Figure 16: Turn-Off SOA
Figure 17: Emitter-Collector Diode Character-
istics
Figure 18: Ic vs Frequency
For a fast IGBT suitable for high frequency appli-
cations, the typical collector current vs. maximum
operating frequency curve is reported. That fre-
quency is defined as follows:
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
considering T = T
2) The conduction losses are:
with 50% of duty cycle, V
@125°C.
3) Power dissipation during ON & OFF commuta-
tions is due to the switching frequency:
4) Typical values @ 125°C for switching losses are
used (test conditions: V
R
ergy is included in the E
tail of the collector current is included in the E
measurements (see note 3).
G
= 3.3 Ohm). Furthermore, diode recovery en-
f
MAX
P
SW
P
P
= (P
C
J
D
= (E
= I
- T
= T / R
D
C
C
ON
ON
- P
CE
* V
= 125 °C- 75 °C = 50°C
C
(see note 2), while the
+ E
CE(SAT)
= 390V, V
STGW20NC60VD
) / (E
CESAT
THJ-C
OFF
ON
) * freq.
*
typical value
+ E
GE
OFF
= 15V,
)
7/11
OFF