STGW30NC120HD STMicroelectronics, STGW30NC120HD Datasheet - Page 7

• Manufacturer Part Number: STGW30NC120HD
• Description: IGBT N-CHAN 1200V 30A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30NC120HD

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.75V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.75 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.75V
• Power Dissipation Pd: 220W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5314-5

STGW30NC120HD
Figure 8.
Figure 10. Normalized breakdown
Figure 12. Switching losses vs. gate
Normalized gate threshold
voltage vs. temperature
voltage vs. temperature
resistance
Figure 9.
Figure 11. Switching losses vs.
Figure 13. Switching losses vs. collector
Collector-emitter on voltage
vs. collector current
temperature
current
Electrical characteristics
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