IXGH16N170 IXYS, IXGH16N170 Datasheet - Page 3

• Manufacturer Part Number: IXGH16N170
• Description: IGBT 1700V 32A TO-247AD
• Manufacturer: IXYS

Specifications of IXGH16N170

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 16A
• Current - Collector (ic) (max): 32A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1700
• Ic25, Tc=25°c, Igbt, (a): 32
• Ic90, Tc=90°c, Igbt, (a): 16
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Igbt, (ns): 770
• Eoff, Typ, Tj=125°c, Igbt, (mj): 11.2
• Rthjc, Max, Igbt, (°c/w): 0.65
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
32
28
24
20
32
28
24
20
1 0
1 6
1 2
1 6
1 2
9
8
7
6
5
4
3
2
8
4
0
8
4
0
1
0.5
0.5
5
6
1
Fig. 5. Collector-to-Emitter Voltage
1 .5
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
1 .5
vs. Gate-to-Emiiter voltage
8
2.5
2
V
V
@ 125 Deg. C
@ 25 Deg. C
G E
V
G E
V
V
9
GE
2.5
CE
CE
= 1 7V
= 1 7V
1 1 V
1 1 V
1 5V
1 3V
1 5V
1 3V
T
3.5
- V olts
- V olts
- V olts
1 0
J
= 25
I
C
3
8A
= 32A
1 6A
1 1
º
C
4.5
3.5
1 2
7V
4
9V
1 3
5.5
7V
9V
4.5
1 4
6.5
1 5
5
1 60
1 40
1 20
1 00
0.8
0.6
80
60
40
20
1 .8
1 .6
1 .4
1 .2
56
48
40
32
24
1 6
0
2
8
0
1
-50
0
3
Fig. 4. T emperature Dependence of V
Fig. 2. Extended Output Characteristics
-25
2
V
T
4
G E
J
Fig. 6. Input Admittance
= 1 25
-40
= 1 5V
25
4
T
º
0
º
C
J
º
I
C
5
C
- Degrees Centigrade
C
= 32A
6
@ 25 deg. C
25
V
V
V
G E
GE
6
CE
8
= 1 7V
- V olts
50
- V olts
I
C
IXGH 16N170
IXGT 16N170
1 0
= 1 6A
7
75
1 2
8
I
1 00
C
= 8A
1 4
1 5V
1 3V
1 1 V
9V
7V
CE(sat)
1 25
9
1 6
1 50
1 0
1 8