IXGH17N100AU1 IXYS, IXGH17N100AU1 Datasheet
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IXGH17N100AU1
Specifications of IXGH17N100AU1
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IXGH17N100AU1 Summary of contents
Page 1
... 500 GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 1996 IXYS All rights reserved IXGH 17 N100U1 IXGH 17 N100AU1 1000 Maximum Ratings 1000 = 1 M 1000 0.8 V CES 150 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 6 300 Characteristic Values ( unless otherwise specified) J min. typ. ...
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... - C90 540 -di/dt = 100 thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 1500 210 40 100 = 0 CES 60 100 ...
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... Gate-Emitter Voltage Volts GE Fig. 5 Input Admittance 10V 25° 125° Volts CE © 1996 IXYS All rights reserved 150 13V 11V 125 9V 100 1 25°C J 1.3 1.2 1 34A C 1 17A C 0 8.5A 0.8 C 0.7 0.6 1.2 1.1 1.0 0.9 0.8 0 40° ...
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... D=0.1 0.1 D=0.05 D=0.02 D=0.01 Single Pulse 0.01 0.0001 0.001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Fig.8 Turn-Off Safe Operating Area 100 10 1 0.1 0. Duty Cycle ...
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... T - Degrees C J Fig.15 Peak Reverse Recovery Current 100° 540V 200 di /dt - A/µs F © 1996 IXYS All rights reserved Fig.12 Peak Forward Voltage 25° 2.5 3.0 3.5 Fig.14 Reverse Recovery Chargee 120 160 Fig.16 Reverse Recovery Time 0.8 max 30A F 0 ...
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... Fig.17 Diode Transient Thermal resistance junction to case 1.00 0.10 0.01 0.001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 0.01 Pulse Width - Seconds 4,835,592 4,881,106 4,850,072 4,931,844 ...