IXGT32N170 T&R IXYS, IXGT32N170 T&R Datasheet - Page 4
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IXGT32N170 T&R
Manufacturer Part Number
IXGT32N170 T&R
Description
IGBT NPT 1700 75A TO-268
Manufacturer
IXYS
Datasheet
1.IXGT32N170_TR.pdf
(5 pages)
Specifications of IXGT32N170 T&R
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
3.3V @ 15V, 32A
Current - Collector (ic) (max)
75A
Power - Max
350W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IXGT32N170TR
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
45
40
35
30
25
20
15
10
22
20
18
16
14
12
10
15
12
5
0
8
9
6
3
0
16
0
0
T
R
R
V
V
J
V
I
I
C
G
GE
CE
G
G
= -40ºC
CE
= 32A
= 1 0mA
= 15Ω - - - - -
125ºC
= 3Ω
= 1020V
= 15V
25ºC
= 850V
Fig. 7. Transconductance
16
24
Fig. 9. Dependence of E
30
Fig. 11. Gate Charge
Q
32
32
G
I
I
C
- nanoCoulombs
60
C
- Amperes
- Amperes
48
40
90
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
64
T
48
off
J
= 125ºC
on I
T
J
120
= 25ºC
c
80
56
150
96
64
10000
1000
100
25
23
21
19
17
15
13
11
22
20
18
16
14
12
10
10
8
25
0
0
T
V
V
R
R
V
V
J
GE
CE
G
G
GE
CE
= 125ºC
35
f = 1 MHz
Fig. 8. Dependence of E
= 15Ω - - - - -
= 1020V
= 3Ω
= 15V
Fig. 10. Dependence of E
5
= 1020V
= 15V
10
45
Fig. 12. Capacitance
T
10
J
55
- Degrees Centigrade
Tem perature
R
15
V
65
20
G
C E
- Ohms
75
- Volts
20
IXGH 32N170
IXGT 32N170
30
85
25
I
I
I
C
C
C
off
95
6,534,343
= 64A
= 32A
= 16A
C
C
C
I
C
I
ies
oes
res
on R
C
30
off
I
= 64A
C
= 32A
105 115 125
40
on
= 16A
G
35
6,583,505
40
50