IRG7PH42UDPBF International Rectifier, IRG7PH42UDPBF Datasheet - Page 2

• Manufacturer Part Number: IRG7PH42UDPBF
• Description: IGBT 1200V 85A W/DIODE TO-247AC
• Manufacturer: International Rectifier

Specifications of IRG7PH42UDPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 30A
• Current - Collector (ic) (max): 85A
• Power - Max: 320W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 85A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 320W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Rohs Compliant: Yes
• Package: TO-247
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 85
• Ic @ 100c (a): 45
• Vce(on)@25c Typ (v): 1.70
• Vce(on)@25c Max (v): 2.00
• Ets Typ (mj): 3.29
• Ets Max (mj): 3.8
• Vf Typ: 2.00
• Pd @25c (w): 320
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRG7PH42UDPbF/IRG7PH42UD-EP
Notes:

‚
ƒ
„
…
Electrical Characteristics @ T
V
∆V
V
V
∆V
gfe
I
V
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
Erec
t
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
(BR)CES
CE(on)
GE(th)
FM
on
off
total
on
off
total
ies
oes
res
g
ge
gc
(BR)CES
GE(th)
V
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
R
Calculated continuous current based on maximum allowable junction temperature.
Bond wire current limit is 78A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.
2
CC
θ
is measured at
/∆TJ
= 80% (V
/∆T
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
CES
), V
J
GE
= 20V, L = 22µH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
=
10Ω.
(BR)CES
safely.
Min.
1200
Min.
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ.
Typ.
1200
2105
1182
3287
2978
1968
4946
3338
1475
0.18
157
229
290
154
124
153
1.7
2.1
-14
4.4
2.0
2.2
32
21
69
25
32
63
19
32
75
34
—
—
—
Max. Units
Max. Units
2374
1424
3798
±100
150
236
104
271
2.0
6.0
2.4
32
34
41
86
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C V
nC
µA
nA
pF
µJ
ns
µJ
ns
µJ
ns
V
V
V
S
V
A
Energy losses include tail & diode reverse recovery
Energy losses include tail & diode reverse recovery
V
I
I
V
V
V
V
I
I
V
I
V
V
I
R
I
R
V
V
f = 1.0Mhz
T
V
Rg = 10Ω, V
T
V
Rg = 10Ω, L =1.0mH
C
C
F
F
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
CC
J
CC
J
CC
G
G
= 30A
= 30A, T
= 30A, V
= 30A, V
= 30A
= 30A, V
= 30A, V
=10Ω, L=200µH, T
= 150°C, I
= 150°C
= 10Ω, L = 200µH,T
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±30V
= 15V
= 600V
= 0V
= 30V
= 960V, Vp =1200V
= 600V, I
Conditions
GE
GE
, I
, I
J
C
C
GE
GE
CC
CC
C
C
CE
CE
C
= 150°C
GE
= 100µA
= 2.0mA (25°C-150°C)
C
= 1.0mA
= 1.0mA (25°C - 150°C)
F
= 15V, T
= 15V, T
= 30A, PW = 80µs
= 600V, V
= 600V, V
= 1200V
= 1200V, T
= 120A
= 30A
= +20V to 0V
Conditions
J
J
J
= 150°C
J
= 25°C
= 150°C
GE
GE
= 25°C
J
=15V
= 15V
= 150°C
Ã
www.irf.com