STGY40NC60VD STMicroelectronics, STGY40NC60VD Datasheet - Page 4

• Manufacturer Part Number: STGY40NC60VD
• Description: IGBT N-CHAN 50A 600V MAX247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGY40NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 260W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: MAX247™
• Transistor Type: IGBT
• Dc Collector Current: 80A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 260W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-6736-5; STGY40NC60VD

STGY40NC60VD
4/11
Table 10: Collector-Emitter Diode
Symbol
I
I
Q
Q
V
rrm
rrm
t
t
t
S
t
S
rr
rr
a
a
rr
rr
f
Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
Parameter
I
I
I
Tj = 25°C, di/dt = 100 A/ s
(see Figure 22)
I
Tj =125°C, di/dt = 100 A/ s
(see Figure 22)
f
f
f
f
= 20 A
= 20 A, Tj = 125 °C
= 20 A ,V
= 20 A ,V
Test Conditions
R
R
= 40 V,
= 40 V,
Min.
0.375
Typ.
0.57
237
1.5
5.4
44
32
66
88
56
1
3
Max.
2.2
Unit
nC
nC
ns
ns
ns
ns
V
V
A
A