IRG4PSH71KPBF International Rectifier, IRG4PSH71KPBF Datasheet

IGBT UFAST 1200V 78A SUPER247

IRG4PSH71KPBF

Manufacturer Part Number
IRG4PSH71KPBF
Description
IGBT UFAST 1200V 78A SUPER247
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4PSH71KPBF

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 42A
Current - Collector (ic) (max)
78A
Power - Max
350W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
78A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
350W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4PSH71KPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4PSH71KPBF
Quantity:
25 780
INSULATED GATE BIPOLAR TRANSISTOR
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance\ Mechanical
www.irf.com
• Hole-less clip/pressure mount package compatible
• High short circuit rating IGBTs, optimized for
• Minimum switching losses combined with low
• Tightest parameter distribution
• Creepage distance increased to 5.35mm
• Highest current rating IGBT
• Maximum power density, twice the power
R
R
R
V
I
I
I
I
t
V
E
P
P
T
T
C
C
LM
SC
CM
STG
CES
GE
ARV
D
D
J
handling of the TO-247, less space than TO-264
motorcontrol
with TO-247 and TO-264, with reinforced pins
conduction losses
JC
CS
JA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter
Parameter
PRELIMINARY
G
n-channel
20.0(2.0)
Min.
–––
300 (0.063 in. (1.6mm from case )
–––
–––
–––
E
IRG4PSH71K
C
-55 to + 150
SUPER - 247
Max.
6 (0.21)
1200
± 20
156
156
170
350
140
78
42
10
Typ.
0.24
–––
–––
–––
Short Circuit Rated
V
@V
CE(on) typ.
V
UltraFast IGBT
GE
CES
PD - 91687A
= 15V, I
Max.
0.36
–––
–––
–––
= 1200V
38
= 2.97V
C
Units
= 42A
N (kgf)
Units
g (oz)
°C/W
mJ
µs
W
°C
A
V
V
1
5/11/99

Related parts for IRG4PSH71KPBF

IRG4PSH71KPBF Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction losses • Tightest parameter distribution ...

Page 2

IRG4PSH71K Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS Temperature Coeff. of Breakdown Voltage ––– (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th ...

Page 3

Square wave: 40 60% of rated voltage 20 Ideal diodes 0 0.1 Fig Typical Load Current vs. Frequency (For square wave, I=I 1000 100 ° 150 C J ° ...

Page 4

IRG4PSH71K 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature .50 0 0.05 0.0 2 ...

Page 5

1MHz ies res 8000 oes ies 6000 4000 2000 C oes C res ...

Page 6

IRG4PSH71K 5 150 C ° 960V 15V Collector Current (A) C Fig Typical Switching ...

Page 7

L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth a ...

Page 8

IRG4PSH71K Case Outline and Dimensions — Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 ...

Related keywords