IXBH16N170 IXYS, IXBH16N170 Datasheet
IXBH16N170
Specifications of IXBH16N170
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IXBH16N170 Summary of contents
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... V GE(th 0.8 • V CES CE CES 0V ± 20V GES 16A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved IXBH16N170 IXBT16N170 Maximum Ratings 1700 Ω 1700 ± 20 ± 120 Ω ≤ V 1350 CES 250 -55 ... +150 150 -55 ... +150 300 260 1.13/10 ...
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... R 4.32 S 6.15 BSC TO-268 (IXBT) Outline Max. 2.6 V μs A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXBH16N170 IXBT16N170 ∅ Drain Tab - Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1 ...
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... Fig. 2. Extended Output Characteristics @ 25º Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 32A 16A - Degrees Centigrade J Fig. 6. Input Admittance 40ºC J 5.0 5.5 6.0 6.5 7.0 7 Volts GE IXBH16N170 IXBT16N170 V = 15V GE 13V 11V CE(sat 100 125 150 25ºC 125ºC 8.0 8.5 9.0 9.5 ...
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... Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 125º 0.6 0.8 1.0 1.2 1.4 1.6 1 Volts F Fig. 10. Capacitance MHz C ies C oes C res Volts CE Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 Pulse Width - Seconds IXBH16N170 IXBT16N170 = 25ºC 2.0 2.2 2 IXYS REF: B_16N170(4A)10-06-08 ...
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... Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off ) T = 125º 15V 850V 16A 32A 100 120 R - Ohms G IXBH16N170 IXBT16N170 260 250 I = 16A C 240 230 220 210 I = 32A C 200 190 95 105 115 125 1400 1200 1000 800 600 400 200 0 ...