IXLF19N250A IXYS, IXLF19N250A Datasheet
IXLF19N250A
Manufacturer Part Number
IXLF19N250A
Description
IGBT HIGH VOLTAGE 2500V 32AMP
Manufacturer
IXYS
Datasheet
1.IXLF19N250A.pdf
(4 pages)
Specifications of IXLF19N250A
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
2500V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 19A
Current - Collector (ic) (max)
32A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS i4-PAC™
Channel Type
N
Configuration
Single
Collector Current (dc) (max)
32A
Gate To Emitter Voltage (max)
±20V
Package Type
ISOPLUS i4-Pac
Pin Count
3
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
2500
Ic25, Tc=25°c, Igbt, (a)
32
Ic110, Tc=110°c, Igbt, (a)
19
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.9
Tfi, Typ, Igbt, (ns)
250
Eoff, Typ, Tj=125°c, Igbt, (mj)
30
Rthjc, Max, Igbt, (k/w)
0.5
Package Style
ISOPLUS i4-PAC (3HV)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1750432
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXLF19N250A
Manufacturer:
IX
Quantity:
5 510
Company:
Part Number:
IXLF19N250A
Manufacturer:
ST
Quantity:
4 000
High Voltage IGBT
in High Voltage
ISOPLUS i4-PAC
Symbol
V
V
I
I
I
V
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
C
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
IGBT
C25
C90
CM
CES
GES
d(on)
r
d(off)
f
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
ies
oes
res
thJC
Gon
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
T
Conditions
I
I
V
V
V
V
Inductive load, T
V
V
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
GE
= 1 mA; V
= 19 A; V
= 25°C
= 90°C
= 25°C
= 25°C to 150°C
= V
= 1500V; V
= ± 15 V; R
= 0 V; V
= 25 V; V
= 1500 V; I
= ± 15 V; R
CES
; V
GE
GE
GE
GE
TM
GE
= 15 V; T
= ± 20 V
G
= V
= 0 V; T
GE
G
C
= 0 V; f = 1 MHz
= 47 Ω; T
= 47 Ω
VJ
= 19 A
= 15 V; I
CE
= 125°C
T
T
VJ
VJ
VJ
VJ
= 25°C
= 25°C
= 125°C
= 125°C
VJ
C
= 19 A
= 125°C
(T
VJ
= 25°C, unless otherwise specified)
min.
Characteristic Values
5
Maximum Ratings
2.28
100
600
250
103
142
typ.
3.2
4.7
0.2
50
15
30
43
2500
1200
± 20
250
5
1
2
32
19
70
max.
0.15 mA
500
3.9
0.5 K/W
8
mA
mJ
mJ
W
nC
nA
nF
pF
pF
ns
ns
ns
ns
V
V
A
A
A
V
V
V
V
Features
•
•
Applications
•
•
•
•
•
I
V
V
t
High Voltage IGBT
- substitute for high voltage MOSFETs
- substitute for high voltage thyristors
- substitute for electromechanical trigger
ISOPLUS i4-PAC
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
- application friendly pinout
- high reliability
- industry standard outline
- UL registered
switched mode power supplies
DC-DC converters
resonant converters
laser generators, x ray generators
discharge circuits
C25
f
with significantly lower voltage drop
and comparable switching speed
with voltage control of turn on & turn off
and discharge relays
voltage pins
CES
CE(sat)
1
2
= 32 A
= 2500 V
= 3.2 V
= 250 ns
5
IXLF 19N250A
E72873
TM
1 - 4
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IXLF19N250A Summary of contents
Page 1
... C ies MHz oes res 1500V Gon thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved Maximum Ratings 2500 ± 125° 1200 250 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. ...
Page 2
... C pin - E pin pin - backside metal with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved Dimensions 0.0394") Maximum Ratings °C -55...+150 °C -55...+125 2500 V~ 20...120 N Characteristic Values min. ...
Page 3
... 125° 25° Fig. 3 Typ. Transfer Characteristics 1500 25° 100 Q Fig. 5 Typ. Gate Charge characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved = 150 nC G IXLF 19N250A 125° Fig. 2 Typ. Output Characteristics ...
Page 4
... E t off t r 120 t d(on 350 t ns d(on) 300 E 250 off 200 150 100 50 0 Ω 200 250 G IXLF19N250A IXLF 19N250A 1500 ± Ω 125° off Fig. 8 Typ. turn off energy and switching times versus collector current 40 mJ ...