FGH20N60UFDTU Fairchild Semiconductor, FGH20N60UFDTU Datasheet - Page 3

• Manufacturer Part Number: FGH20N60UFDTU
• Description: IGBT 600V 40A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH20N60UFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 165W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH20N60UFD Rev. A1
Thermal Characteristics
Electrical Characteristics of the Diode
R
R
R
V
t
Q
Symbol
rr
FM
qJC
qJC
qJA
rr
Symbol
(IGBT)
(Diode)
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Parameter
I
I
F
ES
= 10A
=10A, dI
Test Conditions
ES
T
/dt = 200A/ms
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
C
C
C
C
C
C
= 25
= 125
= 25
= 125
= 25
= 125
Typ.
o
o
o
-
-
-
C
C
C
o
o
o
C
C
C
Min.
-
-
-
-
-
-
Max.
0.76
2.51
40
Typ.
1.9
1.7
34
57
41
96
Max
2.5
www.fairchildsemi.com
-
-
-
-
-
Units
o
o
o
C/W
C/W
C/W
Unit
nC
ns
s
V