FGH20N60SFDTU Fairchild Semiconductor, FGH20N60SFDTU Datasheet - Page 6

• Manufacturer Part Number: FGH20N60SFDTU
• Description: IGBT 600V 40A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH20N60SFDTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 165W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH20N60SFD Rev. A
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 15. Turn-off Characteristics vs.
Figure 17. Switching Loss vs.
1000
100
0.02
100
300
10
0.1
10
10
1
0
0
0
Common Emitter
V
I
T
T
C
Common Emitter
V
T
T
Common Emitter
V
T
T
C
C
CC
C
C
= 20A
GE
GE
C
C
Collector Current
= 25
= 125
= 25
= 125
= 25
= 125
Gate Resistance
= 400V, V
= 15V, R
Collector Current
= 15V, R
10
o
o
C
o
o
C
o
C
C
o
C
C
Gate Resistance, R
10
10
Collector Current, I
Collector Current, I
GE
G
G
20
= 10
= 10
= 15V
Ω
Ω
30
20
20
t
d(off)
G
t
C
40
f
[
C
[A]
Ω
[A]
t
]
d(off)
t
30
30
f
50
E
E
on
off
60
40
40
6
200
100
0.1
10
80
10
Figure 14. Turn-on Characteristics vs.
Figure 16. Switching Loss vs.
1
3
3
1
Figure 18. Turn off Switching
0
0
1
Safe Operating Area
V
Common Emitter
V
T
T
Common Emitter
V
I
T
T
C
C
C
C
C
GE
CC
GE
= 20A
= 25
= 125
= 25
= 125
= 15V, R
= 400V, V
= 15V, T
10
Collector-Emitter Voltage, V
o
o
C
C
o
o
Gate Resistance
C
C
10
Collector Current, I
Gate Resistance, R
C
G
GE
= 125
= 10
20
10
Collector Current
= 15V
SOA Characteristics
Ω
o
C
30
20
E
E
on
off
t
t
r
d(on)
C
100
40
G
[A]
[
Ω
30
]
CE
[V]
50
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1000
60
40