APT15GN120BDQ1G Microsemi Power Products Group, APT15GN120BDQ1G Datasheet - Page 9

• Manufacturer Part Number: APT15GN120BDQ1G
• Description: IGBT 1200V 45A 195W TO247
• Manufacturer: Microsemi Power Products Group

Specifications of APT15GN120BDQ1G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 15A
• Current - Collector (ic) (max): 45A
• Power - Max: 195W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT15GN120BDQ1GMI; APT15GN120BDQ1GMI

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TYPICAL PERFORMANCE CURVES
1
4
5
2
3
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
F
RRM
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
line through I
current goes from positive to negative, to the point at which the straight
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
RRM
passes through zero.
Figure 33, Diode Reverse Recovery Waveform and Definitions
RRM
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
and t rr .
TO-247 Package Outline
Dimensions in Millimeters and (Inches)
e1 SAC: Tin, Silver, Copper
di
F
/dt Adjust
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
Figure 32. Diode Test Circuit
6.15 (.242) BSC
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
30µH
5.45 (.215) BSC
2-Plcs.
Zero
V r
APT10078BLL
1
15.49 (.610)
16.26 (.640)
TRANSFORMER
PEARSON 2878
CURRENT
2
D.U.T.
5.38 (.212)
6.20 (.244)
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
(Cathode)
Emitter
(Anode)
3
APT15GN120BDQ1(G)
4
5
t rr / Q rr
Waveform
0.25 I RRM