APT43GA90BD30 Microsemi Power Products Group, APT43GA90BD30 Datasheet

IGBT 900V 78A 337W TO247

APT43GA90BD30

Manufacturer Part Number
APT43GA90BD30
Description
IGBT 900V 78A 337W TO247
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT43GA90BD30

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
900V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 47A
Current - Collector (ic) (max)
78A
Power - Max
337W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT43GA90BD30MI
APT43GA90BD30MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT43GA90BD30
Manufacturer:
APT
Quantity:
2 000
Absolute Maximum Ratings
Static Characteristics
Thermal and Mechanical Characteristics
POWER MOS 8
through leading technology silicon design and lifetime control processes. A reduced E
V
gate charge and a greatly reduced ratio of C
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
Symbol
Symbol
Symbol
CE(ON)
FEATURES
T
V
Torque
SSOA
V
V
J
• Fast switching with low EMI
• Very Low E
• Ultra low C
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
V
V
, T
BR(CES)
R
R
I
I
I
I
I
P
CE(on)
W
T
GE(th)
CES
GES
CM
ces
C1
C2
GE
θJC
θJC
D
L
STG
T
tradeoff results in superior effi ciency compared to other IGBT technologies. Low
Parameter
Collector Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Gate-Emitter Voltage
Total Power Dissipation @ T
Switching Safe Operating Area @ T
Operating and Storage Junction Temperature Range
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Characteristic
Junction to Case Thermal Resistance (IGBT)
Junction to Case Thermal Resistance (Diode)
Package Weight
Mounting Torque (TO-247 Package), 4-40 or M3 screw
res
off
®
is a high speed Punch-Through switch-mode IGBT. Low E
for maximum effi ciency
for improved noise immunity
High Speed PT IGBT
2
1
C
= 25°C
C
C
Microsemi Website - http://www.microsemi.com
= 25°C
= 100°C
J
res
= 150°C
/C
ies
T
provide excellent noise immunity, short
J
= 25°C unless otherwise specifi ed
V
V
V
CE
I
GE
C
V
GE
Test Conditions
V
= 47A
= 900V,
GE
= 15V,
GE
= 0V
= 0V, I
V
=V
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high effi ciency industrial
GS
CE
= ±30V
, I
C
C
= 1.0mA
= 1mA
T
T
T
T
off
J
J
J
J
= 25°C
= 125°C
= 25°C
= 125°C
is achieved
off
-
Min
900
Min
3
-
-
-
APT43GA90BD30
G
Combi (IGBT and Diode)
129A @ 900V
C
-55 to 150
Ratings
E
Typ
Typ
900
129
±30
337
300
2.5
2.2
4.5
5.9
78
43
-
-
APT43GA90B
Max
1500
0.37
0.80
Max
±100
350
10
3.1
6
-
900V
°C/W
Unit
in·lbf
Unit
Unit
°C
μA
nA
W
V
A
V
V
g

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APT43GA90BD30 Summary of contents

Page 1

... Test Conditions 1.0mA 15V 47A 1mA 900V ±30V GS Microsemi Website - http://www.microsemi.com APT43GA90BD30 is achieved - off APT43GA90B Combi (IGBT and Diode) Ratings 900 78 43 129 ±30 337 129A @ 900V -55 to 150 300 Min Typ Max 900 = 25°C 2.5 3 125° 25° ...

Page 2

... GE L= 100uH 900V CE Inductive Switching (25° 600V 15V 25A 4.7Ω +25°C J Inductive Switching (125° 600V 15V 25A 4.7Ω +125°C J APT43GA90BD30 Min Typ Max Unit 2465 227 pF 34 116 129 875 μ J 425 117 129 1660 μ J 1000 ...

Page 3

... FIGURE 7, Threshold Voltage vs Junction Temperature T = 150°C J 2 25° -55° 25°C. J 250μs PULSE TEST <0.5 % DUTY CYCLE = 25A 100 125 150 APT43GA90BD30 300 15V 13V 250 12V 200 11V 150 10V 100 COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 2, Output Characteristics ( 25A ...

Page 4

... T 25°C J 400 40 50 FIGURE 14, Turn-Off Energy Loss vs Collector Current 3000 2500 50A on2, 2000 E 50A on2, 1500 1000 E 12.5A 500 off, E 12.5A on2 FIGURE 16, Switching Energy Losses vs Junction Temperature APT43GA90BD30 V =15V,T =125° =15V,T =25° 600V 4.7Ω 100μ ...

Page 5

... FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 200 C 100 ies 10 C oes C res 0.1 600 800 FIGURE 18, Minimum Switching Safe Operating Area SINGLE PULSE RECTANGULAR PULSE DURATION (SECONDS) T (°C) C .2789 .2100 APT43GA90BD30 100 V , COLLECTOR-TO-EMITTER VOLTAGE CE Note Duty Factor Peak θ 0.1 1 1000 ...

Page 6

... Figure 20, Inductive Switching Test Circuit T = 125°C 90% J Gate Voltage t d(off 10% 0 Switching Energy Figure 22, Turn-off Switching Waveforms and Defi nitions 10% Gate Voltage t d(on) Switching Energy A Figure 21, Turn-on Switching Waveforms and Defi nitions Collector Voltage Collector Current APT43GA90BD30 Collector Current 10 Collector Voltage = 125°C ...

Page 7

... 400V 125° SINGLE PULSE RECTANGULAR PULSE DURATION (seconds) T (° 0.560 0.240 0.00230 0.284 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL = 25°C unless otherwise specifi ed. C APT43GA90BD30 30 51 320 Min Type Max 2.0 2.4 1.7 Min Typ Max - 175 ...

Page 8

... Figure 3. Reverse Recovery Time vs. Current Rate of Change 30A 800 1000 1200 Figure 5. Reverse Recovery Current vs. Current Rate of Change 100 125 150 Figure 7. Maximum Average Forward Current vs. CaseTemperature 100 200 APT43GA90BD30 200 T = 125°C 60A 400V 180 R 160 30A 140 120 100 ...

Page 9

... Max. 0.40 (.016) 19.81 (.780) 0.79 (.031) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT43GA90BD30 D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 15.49 (.610) 16.26 (.640) 5 ...

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