APT50GT120B2RDQ2G Microsemi Power Products Group, APT50GT120B2RDQ2G Datasheet - Page 9

• Manufacturer Part Number: APT50GT120B2RDQ2G
• Description: IGBT 1200V 94A 625W TO247
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT50GT120B2RDQ2G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector (ic) (max): 94A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT50GT120B2RDQ2GMI; APT50GT120B2RDQ2GMI

Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.
1
4
5
2
3
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
F
RRM
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
current goes from positive to negative, to the point at which the straight
line through I
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
RRM
passes through zero.
Figure 33, Diode Reverse Recovery Waveform and Definitions
RRM
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
T-MAX
Dimensions in Millimeters and (Inches)
and t rr .
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
di
F
®
/dt Adjust
Package Outline
1.01 (.040)
1.40 (.055)
(.177) Max.
Figure 32. Diode Test Circuit
5.45 (.215) BSC
4.50
2-Plcs.
30µH
15.49 (.610)
16.26 (.640)
Zero
V r
APT10078BLL
1
TRANSFORMER
PEARSON 2878
CURRENT
Collector
(Cathode)
5.38 (.212)
6.20 (.244)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Emitter
(Anode)
2
D.U.T.
3
4
5
APT50GT120B2RDQ2G
t rr / Q rr
Waveform
0.25 I RRM