APT35GP120BG Microsemi Power Products Group, APT35GP120BG Datasheet - Page 3

• Manufacturer Part Number: APT35GP120BG
• Description: IGBT 1200V 96A 543W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT35GP120BG

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 35A
• Current - Collector (ic) (max): 96A
• Power - Max: 543W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT35GP120BGMI; APT35GP120BGMI

FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
1.05
0.95
0.90
0.85
120
100
1.2
1.1
1.0
0.8
80
70
60
50
40
30
20
10
80
60
40
20
0
0
6
5
4
3
2
1
0
FIGURE 1, Output Characteristics(V
-50
V
0
0
6
CE
250µs PULSE TEST
<0.5 % DUTY CYCLE
<0.5 % DUTY CYCLE
250µs PULSE TEST
V
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
1
FIGURE 3, Transfer Characteristics
GE
-25
T
V GE = 15V.
J
, GATE-TO-EMITTER VOLTAGE (V)
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
T
C
1
2
8
=125°C
0
3
I
C=
T J = 125°C
T
25
70A
10
C
2
4
=25°C
I
C=
T J = 25°C
50
5
35A
12
3
6
75
250µs PULSE TEST
<0.5 % DUTY CYCLE
7
I
100 125 150
C=
T J = 25°C.
T J = -55°C
17.5A
14
4
8
GE
9
= 15V)
16
10
5
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
140
120
100
4.5
3.5
2.5
1.5
0.5
80
70
60
50
40
30
20
10
16
14
12
10
80
60
40
20
0
8
6
4
2
0
5
4
3
2
1
0
0
FIGURE 2, Output Characteristics (V
-50
V
0
0
0
CE
250µs PULSE TEST
T
250µs PULSE TEST
<0.5 % DUTY CYCLE
<0.5 % DUTY CYCLE
I
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 35A
20
-25
V GE = 10V.
V GE = 15V.
T
T
C
25
T
C
1
=125°C
J
, CASE TEMPERATURE (°C)
40
FIGURE 4, Gate Charge
, Junction Temperature (°C)
0
GATE CHARGE (nC)
I
C=
V
60
25
T
CE
35A
50
C
2
=25°C
= 600V
V
CE
80
50
= 240V
75
3
100 120 140 160
75
I
V
C=
100 125 150
CE
100
17.5A
4
= 960V
I
C=
GE
70A
= 10V)
125
5