IRG4RC10KPBF International Rectifier, IRG4RC10KPBF Datasheet

IGBT UFAST 600V 9A DPAK

IRG4RC10KPBF

Manufacturer Part Number
IRG4RC10KPBF
Description
IGBT UFAST 600V 9A DPAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4RC10KPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.62V @ 15V, 5A
Current - Collector (ic) (max)
9A
Power - Max
38W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Package
D-Pak
Circuit
Discrete
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
600
Ic @ 25c (a)
9
Ic @ 100c (a)
5
Vce(on)@25c Typ (v)
2.39
Vce(on)@25c Max (v)
2.62
Ets Typ (mj)
0.26
Ets Max (mj)
0.32
Pd @25c (w)
38
Environmental Options
PbF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4RC10KPBF
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR
• Short Circuit Rated UltraFast: Optimized for high
• Generation 4 IGBT design provides higher efficiency
• Industry standard TO-252AA package
• Lead-Free
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
Features
Benefits
V
I
I
I
I
t
V
E
P
P
T
T
R
R
Wt
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Rated to 10µs @ 125°C, V
than Generation 3
C
C
CM
LM
sc
operating frequencies >5.0 kHz , and Short Circuit
When mounted on 1" square PCB (FR-4 or G-10 Material).
J
STG
CES
GE
ARV
D
D
θJC
θJA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
GE
= 15V
Parameter
Parameter

G
n-channel
IRG4RC10KPbF
300 (0.063 in. (1.6mm) from case )
0.3 (0.01)
Typ.
–––
–––
E
C
-55 to + 150
Max.
± 20
600
9.0
5.0
18
10
34
38
15
18
Short Circuit Rated
@V
V
CE(on) typ.
UltraFast IGBT
Max.
–––
V
GE
3.3
50
CES
= 15V, I
PD 95389
= 600V
= 2.39V
C
06/10/04
Units
Units
g (oz)
= 5.0A
mJ
µs
°C
V
A
V
1

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IRG4RC10KPBF Summary of contents

Page 1

... R Junction-to-Case θJC R Junction-to-Ambient (PCB mount)* θJA Wt Weight When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com IRG4RC10KPbF n-channel  ‚ - 150 300 (0.063 in. (1.6mm) from case ) Typ. ––– ––– ...

Page 2

... IRG4RC10KPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage „ V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance … Zero Gate Voltage Collector Current ...

Page 3

... Power Dissipation = 1. Frequency (kHz) (Load Current = I of fundamental) RMS 100 ° 10 ° 150 15V 1 5 6.0 7.0 Fig Typical Transfer Characteristics IRG4RC10KPbF Triangular wave: Clamp voltage: 80% of rated 10 ° ° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage (V) GE 5µs PULSE WIDTH ...

Page 4

... IRG4RC10KPbF 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 0.1 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.0 3.0 2.0 1.0 -60 -40 -20 ...

Page 5

... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs Ohm 15V 480V CC 1 0.1 80 100 -60 -40 -20 Ω ) Fig Typical Switching Losses vs. IRG4RC10KPbF = 400V = 5. Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω 2 100 120 140 160 T , Junction Temperature ( C ) ° J Junction Temperature 20 5 ...

Page 6

... IRG4RC10KPbF 1.2 Ω Ohm 150 C ° 480V 15V 1.0 GE 0.8 0.6 0.4 0 Collector Current (A) C Fig Typical Switching Losses vs. Collector Current L 50V 1000V * Driver same type as D.U.T 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. ...

Page 7

... V C 90% 10 d(on) www.irf.com 90% 10% t d(off t=5µ off off IRG4RC10KPbF Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4RC10KPbF 6.73 (.265) 6.35 (.250 5.46 (.215) 5.21 (.205) 4 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 3X 1.14 (.045) 2X 0.76 (.030) 2.28 (.090) 4.57 (.180) EXAMPLE: T HIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com TR 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) FEED DIRECTION 7.9 ( .312 ) Data and specifications subject to change without notice. Visit us at www.irf.com for sales contact information. 06/04 IRG4RC10KPbF TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) FEED DIRECTION 16 mm TAC Fax: (310) 252-7903 9 ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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