IXSP10N60B2D1 IXYS, IXSP10N60B2D1 Datasheet - Page 5

• Manufacturer Part Number: IXSP10N60B2D1
• Description: IGBT HS W/DIODE 600V 20A TO220AB
• Manufacturer: IXYS

Specifications of IXSP10N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 20A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 10
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 165
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.79
• Rthjc, Max, Igbt, (k/w): 1.25
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
340
320
300
280
260
240
220
200
180
160
140
120
10
1
1.4
1.2
0.8
0.6
0.4
0.2
1
0
25
0
0.1
t
t
R
V
V
f = 1 MHz
d(off)
fi
Sw itching Tim e on Tem pe rature
GE
CE
35
G
Fig. 13. Depe nde nce of Turn-off
5
- - - - - -
= 30Ω
= 15V
= 480V
45
Fig. 15. Capacitance
10
T
I
C
J
55
- Degrees Centigrade
= 10A
15
V
65
I
C E
C
= 20A
20
- Volts
75
5A
I
C
85
Fig. 17. Maxim um Trans ient The rm al Res istance
25
1
= 5A
20A
95
C
30
C
C
oes
105 115 125
ies
res
35
Pulse Width - milliseconds
40
1 0
22
20
18
16
14
12
10
16
14
12
10
8
6
4
2
0
8
6
4
2
0
100 150 200 250 300 350 400 450 500 550 600
0
V
I
I
T
R
dV/dT < 10V/ns
C
G
CE
J
2
G
= 1 0A
= 1 0mA
Fig. 16. Reve rs e-Bias Safe
= 125
= 82Ω
= 300V
Fig. 14. Gate Charge
4
º
C
Operating Are a
Q
6
G
V
- nanoCoulombs
1 00
C E
IXSA 10N60B2D1
IXSP 10N60B2D1
8
- Volts
10
12
14
16
1 000
18