IRG7PH30K10PBF International Rectifier, IRG7PH30K10PBF Datasheet - Page 2

• Manufacturer Part Number: IRG7PH30K10PBF
• Description: IGBT N-CH 1200V 33A TO-247AC
• Manufacturer: International Rectifier

Specifications of IRG7PH30K10PBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.35V @ 15V, 9A
• Current - Collector (ic) (max): 33A
• Power - Max: 210W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 33A
• Package Type: TO-247AC
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRG7PH30K10PbF
∆V
∆V
Notes:

‚
ƒ
„
Electrical Characteristics @ T
V
V
V
gfe
I
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
SCSOA
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
(BR)CES
CE(on)
GE(th)
on
off
total
on
off
total
ies
oes
res
g
ge
gc
(BR)CES
GE(th)
V
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Refer to AN-1086 for guidelines for measuring V
R
2
CC
θ
is measured at T
/∆TJ
= 80% (V
/∆T
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
CES
), V
J
GE
of approximately 90°C.
= 20V, L = 200µH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
=
51Ω.
(BR)CES
safely.
Min.
Min.
1200
5.0
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ.
Typ.
1600
1070
1.27
2.05
2.56
2.65
400
530
380
910
110
850
750
130
270
-16
6.2
1.0
8.7
45
20
14
24
38
12
23
63
26
—
—
—
—
Max. Units
Max. Units
1360
2.35
±100
760
600
130
7.5
25
68
13
30
31
41
56
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C V
µA
nA
nC
µJ
ns
µJ
ns
pF
µs
V
V
V
S
V
I
I
I
V
V
V
V
V
I
V
V
I
R
Energy losses include tail & diode reverse recovery
I
R
I
R
Energy losses include tail & diode reverse recovery
I
R
T
V
V
f = 1.0Mhz
V
Rg = 10Ω, V
V
Rg = 22Ω, V
C
C
C
C
C
C
C
C
T
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
J
GE
CC
CC
CC
G
G
G
G
J
= 9.0A, V
= 9.0A, V
= 9.0A, V
= 9.0A
= 9.0A, V
= 9.0A, V
= 9.0A, V
= 9.0A, V
=22Ω, L=1000µH, L
= 175°C
= 22Ω, L = 1000µH, L
= 22Ω, L = 1000µH, L
= 22Ω, L = 1000µH, L
= 175°C, I
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±30V
= 15V
= 600V
= 0V
= 30V
= 960V, Vp =1200V
= 600V, Vp =1200V ,T
Conditions
GE
GE
d
, I
, I
C
C
GE
GE
GE
C
C
CE
CE
CC
CC
CC
CC
C
GE
GE
= 250µA
= 1mA (25°C-175°C)
= 400µA
= 400µA (25°C - 175°C)
C
= 9.0A, PW = 80µs
= 15V, T
= 15V, T
= 15V, T
= 1200V
= 1200V, T
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 36A
= +20V to 0V, T
= +15V to 0V
Conditions
S
J
J
J
=150nH, T
= 25°C
= 150°C
= 175°C
GE
GE
GE
GE
S
S
S
J
=15V
=15V
J
= 150nH,T
= 150nH,T
= 150nH
= 175°C
= 15V
= 15V
= 150°C,
J
Ãd
d
=175°C
d
d
d
Ãd
d
J
= 175°C
J
J
= 25°C
= 25°C
www.irf.com
WF1, WF2
Ref.Fig
Ref.Fig
16, CT3
8,9,10
10,11
12,14
13,15
5,6,7
WF1
WF2
WF4
CT6
CT6
CT1
CT4
CT4
CT4
CT4
CT2
8,9
18
17
4