IXGH30N120C3H1 IXYS, IXGH30N120C3H1 Datasheet - Page 3

• Manufacturer Part Number: IXGH30N120C3H1
• Description: IGBT PT 1200V 48A TO-247AD
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH30N120C3H1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 24A
• Current - Collector (ic) (max): 48A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 42
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.30
• Rthjc, Max, Igbt, (°c/w): 0.50
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 0.90
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
48
44
40
36
32
28
24
20
16
12
48
44
40
36
32
28
24
20
16
12
8
4
0
8
4
0
0.0
0.0
6
0.5
0.5
7
Fig. 5. Collector-to-Emitter Voltage
1.0
1.0
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
8
1.5
1.5
9
2.0
2.0
V
V
CE
V
@ 125ºC
CE
10
@ 25ºC
2.5
2.5
GE
- Volts
- Volts
- Volts
I
3.0
3.0
C
11
V
= 48A
V
GE
24A
GE
12A
3.5
3.5
= 15V
= 15V
13V
11V
12
13V
11V
4.0
4.0
T
13
9V
7V
5V
J
4.5
7V
4.5
= 25ºC
9V
14
5.0
5.0
5.5
5.5
15
180
160
140
120
100
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
60
55
50
45
40
35
30
25
20
15
10
80
60
40
20
5
0
0
4.0
25
0
2
4.5
V
Fig. 2. Extended Output Characteristics
GE
4
= 15V
5.0
Fig. 4. Dependence of V
50
6
Fig. 6. Input Admittance
5.5
V
T
Junction Temperature
GE
8
J
T
IXGH30N120C3H1
= 125ºC
J
= 15V
6.0
10
- 40ºC
- Degrees Centigrade
25ºC
V
75
CE
12
V
@ 25ºC
13V
11V
9V
7V
6.5
GE
- Volts
I
I
I
14
- Volts
C
C
C
7.0
= 48A
= 24A
= 12A
16
100
7.5
18
CE(sat)
20
8.0
22
125
on
8.5
24
9.0
26
150
9.5
28