IXGH24N120C3H1 IXYS, IXGH24N120C3H1 Datasheet - Page 2

• Manufacturer Part Number: IXGH24N120C3H1
• Description: IGBT PT 1200V 48A TO-247AD
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH24N120C3H1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 20A
• Current - Collector (ic) (max): 48A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 110
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.18
• Rthjc, Max, Igbt, (°c/w): 0.50
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
(T
V
I
t
R
Notes:
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fs
on
off
on
off
F
ies
oes
res
thJC
thCK
thJC
g
ge
gc
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
1.
2.
I
V
I
Inductive load, T
I
V
Note 1
Inductive load, T
I
V
Note 1
I
I
V
Test Conditions
Test Conditions
Switching times may increase for V
higher T
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
C
C
C
C
F
F
CE
CE
CE
GE
= 20A, V
= 20A, -di
= 24A, V
= 20A, V
= 20A, V
= 24A, V
PRELIMINARY TECHNICAL INFORMATION
= 25V, V
= 600V, R
= 600V, R
= 0V
J
or increased R
GE
GE
GE
GE
CE
F
/dt = 750A/μs, V
GE
= 0V
= 15V, V
= 15V
= 15V
= 10V, Note 2
G
G
= 0V, f = 1MHz
= 5Ω
= 5Ω
4,835,592
4,881,106
J
J
= 25° ° ° ° ° C
= 125° ° ° ° ° C
CE
G
= 0.5 • V
4,931,844
5,017,508
5,034,796
.
T
J
R
= 125°C
= 800V
CES
5,049,961
5,063,307
5,187,117
CE
(Clamp) > 0.8 • V
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
Min.
10
Min.
6,162,665
6,259,123 B1
6,306,728 B1
1900
CES
1.16
0.47
2.18
1.18
0.25
Typ.
Typ.
125
110
125
305
17
19
70
52
79
12
36
16
27
93
16
35
,
0.50 °C/W
0.85
2.00 mJ
0.9 °C/W
Max.
3.0
2.8
6,404,065 B1
6,534,343
6,583,505
Max.
°C/W
mJ
mJ
nC
nC
nC
mJ
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXGH) AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
6,727,585
6,771,478 B2 7,071,537
IXGH24N120C3H1
7,005,734 B2
7,063,975 B2
7,157,338B2