IXGH50N60A IXYS, IXGH50N60A Datasheet - Page 2

• Manufacturer Part Number: IXGH50N60A
• Description: IGBT HFST 600V 75A 275NS TO247AD
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH50N60A

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 50
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 275
• Eoff, Typ, Tj=125°c, Igbt, (mj): 9.6
• Rthjc, Max, Igbt, (°c/w): 0.5
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Min. Recommended Footprint (Dimensions in inches and (mm))
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
ri
fi
ri
fi
d(on)
d(off)
d(on)
d(off)
fs
off
on
off
ies
oes
res
thJC
thCK
gc
g
ge
Test Conditions
I
Pulse test, t
C
Inductive load, T
I
V
Remarks: Switching times may increase
for V
T
= I
V
I
Inductive load, T
I
V
Remarks: Switching times may increase
for V
higher T
C
C
C
CE
J
CE
CE
= I
= I
= I
or increased R
C90
= 0.8 V
= 25 V, V
= 0.8 V
CE
C90
C90
C90
CE
; V
, V
(Clamp) > 0.8 • V
, V
, V
(Clamp) > 0.8 • V
CE
J
300 s, duty cycle
GE
or increased R
GE
GE
= 10 V,
CES
CES
= 15 V, L = 30 H,
= 15 V, V
= 15 V, L = 30 H
GE
, R
, R
= 0 V, f = 1 MHz
G
G
G
J
J
= R
= R
= 25 C
= 125 C
off
CE
off
= 2.7
= 2.7
G
(T
= 0.5 V
CES
CES
J
, higher
,
= 25 C, unless otherwise specified)
2 %
CES
min.
25
Characteristic Values
IXGH50N60A
4000
typ.
0.25
430
100
200
210
200
275
240
280
600
4.8
9.6
4,835,592
4,850,072
35
35
80
50
50
3
max.
0.50 K/W
250
100
400
50
4,881,106
4,931,844
K/W
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
5,017,508
5,034,796
Dim.
1. Gate
2. Collector
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
S
A
A1
A2
b
b1
C
D
E
e
L
L1
L2
L3
L4
ØP
Q
R
S
1
2
1
2
P
IXGH50N60AS
TO-247 SMD Outline
TO-247 AD Outline
20.80
15.75
19.81
20.80
15.75
5,049,961
5,063,307
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Min.
4.83
2.29
1.91
1.14
1.91
0.61
5.45
4.90
2.70
2.10
0.00
1.90
3.55
5.59
4.32
6.15
4.7
2.2
2.2
1.0
Millimeter
.4
Millimeter
21.46
16.26
20.32
Max.
21.34
16.13
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
Max.
BSC
BSC
5.21
2.54
2.16
1.40
2.13
0.80
5.10
2.90
2.30
0.10
2.10
3.65
6.20
4.83
5.3
2.6
1.4
.8
e
3. Emitter
4. Collector
5,187,117
5,237,481
0.205 0.225
0.232 0.252
Min.
.190
.090
.075
.045
.075
.024
.819
.620
.215
.193
.106
.083
.00
.075
.140
.220
.170
.242
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
P
242 BSC
Inches
Inches
Max.
BSC
BSC
Max.
.205
.100
.085
.055
.084
.031
.840
.635
.201
.114
.091
.004
.083
.144
.244
.190
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
5,486,715
5,381,025