IXGH50N120C3 IXYS, IXGH50N120C3 Datasheet - Page 6

• Manufacturer Part Number: IXGH50N120C3
• Description: IGBT PT 1200V 50A TO-247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH50N120C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 460W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 64
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.1
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
180
160
140
120
100
90
80
70
60
50
40
30
20
80
60
40
20
0
25
2
Switching Times vs. Junction Temperature
3
t
T
V
35
Switching Times vs. Gate Resistance
r
J
CE
= 125ºC, V
= 600V
4
I
I
C
45
C
Fig. 20. Inductive Turn-on
= 80A
Fig. 18. Inductive Turn-on
= 40A
5
55
T
t
GE
6
J
d(on)
- Degrees Centigrade
= 15V
R
7
65
- - - -
G
- Ohms
8
75
9
t
R
V
I
r
G
CE
C
85
= 2Ω , V
10
= 40A
= 600V
I
C
11
95
= 80A
GE
t
d(on)
12
105
= 15V
13
- - - -
115
14
125
15
60
55
50
45
40
35
30
25
20
15
26
25
24
23
22
21
20
19
110
100
90
80
70
60
50
40
30
20
10
0
20
Switching Times vs. Collector Current
t
R
V
r
G
CE
= 2Ω , V
= 600V
30
Fig. 19. Inductive Turn-on
t
GE
d(on)
= 15V
40
- - - -
I
C
- Amperes
50
IXGH50N120C3
T
J
= 125ºC, 25ºC
60
IXYS REF: G_50N120C3(7N)6-03-08
70
80
27
26
25
24
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